SanDisk Technologies LLC patent applications published on July 11th, 2024
Summary of the patent applications from SanDisk Technologies LLC on July 11th, 2024
1. Summary: SanDisk Technologies LLC has recently filed patents for innovative memory device manufacturing processes. These patents involve the creation of etch stop structures, three-dimensional memory devices, and advanced memory device manufacturing methods. The technologies aim to enhance memory device performance, reliability, and efficiency in various electronic applications.
2. Key Points of Patents:
- Etch stop structure formed within a memory opening in a semiconductor device.
- Alternating stack of insulating layers and electrically conductive layers in a three-dimensional memory device.
- Formation of sacrificial material layers and selective growth of sacrificial material portions in memory device manufacturing.
3. Notable Applications:
- Semiconductor manufacturing industry
- Memory device fabrication
- Integrated circuit production
- High-density memory storage devices
- Advanced computing systems
- Consumer electronics and data centers
By leveraging these patented technologies, SanDisk Technologies LLC can potentially revolutionize memory device manufacturing processes, leading to more efficient and reliable memory solutions for a wide range of electronic applications.
Contents
- 1 Patent applications for SanDisk Technologies LLC on July 11th, 2024
- 1.1 NON-VOLATILE MEMORY WTH LOOP DEPENDANT RAMP-UP RATE (18357339)
- 1.2 NON-VOLATILE MEMORY WITH LOWER CURRENT PROGRAM-VERIFY (18357489)
- 1.3 NON-VOLATILE MEMORY WITH SMART CONTROL OF OVERDRIVE VOLTAGE (18357274)
- 1.4 THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING ETCH STOP STRUCTURES LOCATED BETWEEN TIERS (18350552)
- 1.5 THREE-DIMENSIONAL MEMORY DEVICE WITH REDUCED NEIGHBORING WORD LINE INTERFERENCE AND METHODS OF FORMING THE SAME (18355745)
- 1.6 THREE-DIMENSIONAL MEMORY DEVICE WITH HYBRID SUPPORT STRUCTURES AND METHODS OF MAKING THE SAME (18355860)
- 1.7 THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF BY NON-CONFORMAL SELECTIVE DEPOSITION OF INSULATING SPACERS IN A MEMORY OPENING (18355888)
- 1.8 THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF INCLUDING NON-CONFORMAL SELECTIVE DEPOSITION OF SPACERS IN MEMORY OPENINGS (18534283)
- 1.9 THREE-DIMENSIONAL MEMORY DEVICE WITH SELF-ALIGNED WORD LINE CONTACT VIA STRUCTURES AND METHOD OF MAKING THE SAME (18613763)
- 1.10 THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING ETCH STOP STRUCTURES LOCATED BETWEEN TIERS (18350524)
Patent applications for SanDisk Technologies LLC on July 11th, 2024
NON-VOLATILE MEMORY WTH LOOP DEPENDANT RAMP-UP RATE (18357339)
Main Inventor
Abu Naser Zainuddin
NON-VOLATILE MEMORY WITH LOWER CURRENT PROGRAM-VERIFY (18357489)
Main Inventor
Abu Naser Zainuddin
NON-VOLATILE MEMORY WITH SMART CONTROL OF OVERDRIVE VOLTAGE (18357274)
Main Inventor
Yi Song
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING ETCH STOP STRUCTURES LOCATED BETWEEN TIERS (18350552)
Main Inventor
Bing ZHOU
THREE-DIMENSIONAL MEMORY DEVICE WITH REDUCED NEIGHBORING WORD LINE INTERFERENCE AND METHODS OF FORMING THE SAME (18355745)
Main Inventor
Ramy Nashed Bassely SAID
THREE-DIMENSIONAL MEMORY DEVICE WITH HYBRID SUPPORT STRUCTURES AND METHODS OF MAKING THE SAME (18355860)
Main Inventor
Kazuyuki IWATA
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF BY NON-CONFORMAL SELECTIVE DEPOSITION OF INSULATING SPACERS IN A MEMORY OPENING (18355888)
Main Inventor
Rahul SHARANGPANI
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF INCLUDING NON-CONFORMAL SELECTIVE DEPOSITION OF SPACERS IN MEMORY OPENINGS (18534283)
Main Inventor
Kartik SONDHI
THREE-DIMENSIONAL MEMORY DEVICE WITH SELF-ALIGNED WORD LINE CONTACT VIA STRUCTURES AND METHOD OF MAKING THE SAME (18613763)
Main Inventor
Kartik SONDHI
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING ETCH STOP STRUCTURES LOCATED BETWEEN TIERS (18350524)
Main Inventor
Bing ZHOU
