Samsung electronics co., ltd. (20250006264). MEMORY DEVICE AND OPERATING METHOD THEREOF
MEMORY DEVICE AND OPERATING METHOD THEREOF
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MEMORY DEVICE AND OPERATING METHOD THEREOF
This abstract first appeared for US patent application 20250006264 titled 'MEMORY DEVICE AND OPERATING METHOD THEREOF
Original Abstract Submitted
a memory device includes a memory cell array, a page buffer circuit including first to nth page buffers, each page buffer including a sensing node, and a control logic configured to control page buffer operations, wherein the control logic is further configured to control the page buffer operations such that, in a first page buffer operation on a first page buffer included in a first group, a precharge period and a discharge period for a first sensing node of the first page buffer are performed, in a fifth page buffer operation on a fifth page buffer included in a second group, a precharge period and a discharge period for a fifth sensing node of the fifth page buffer are performed, and in a sensing period of the fifth page buffer operation, sensing operations on the first and fifth sensing nodes are performed together.