Samsung electronics co., ltd. (20240429052). METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Contents
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Bongcheol Kim of Suwon-si (KR)
Yeongeun Yook of Suwon-si (KR)
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 20240429052 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Original Abstract Submitted
a method of manufacturing a semiconductor device includes sequentially forming an etch target film and an insulating film on a substrate. a first photoresist film is formed on the insulating film. a first photoresist pattern is formed exposing a first region of the insulating film by patterning the first photoresist film. a protective film is formed covering the first photoresist pattern and the first region of the insulating film. a second photoresist pattern is formed exposing a second region of the protective film. the protective film covers the first photoresist pattern during the forming of the second photoresist pattern. a first trench is formed by etching the etch target film using the first photoresist pattern. a second trench is formed by etching the etch target film using the second photoresist pattern. the forming of the first trench is performed after the forming of the second photoresist pattern.
