Samsung electronics co., ltd. (20240381643). VERTICAL MEMORY DEVICES simplified abstract
Contents
VERTICAL MEMORY DEVICES
Organization Name
Inventor(s)
Byoungtaek Kim of Suwon-si (KR)
VERTICAL MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240381643 titled 'VERTICAL MEMORY DEVICES
The semiconductor device described in the patent application includes a unique gate electrode structure, memory channel structure, and support pattern array.
- The gate electrode structure consists of gate electrodes spaced apart in a first direction perpendicular to the substrate's upper surface, with each electrode extending in a second direction parallel to the surface.
- The memory channel structure is designed to store and retrieve data efficiently.
- The support pattern array comprises support patterns spaced apart in the second and third directions, with each pattern having a distinct shape with three vertices and three sides.
- The positioning of the vertices of adjacent support patterns in the third direction is intentionally offset, enhancing the device's performance.
Potential Applications: This technology can be applied in the development of advanced semiconductor devices for various electronic applications, including memory storage, data processing, and communication systems.
Problems Solved: The innovative design of the support pattern array addresses issues related to data storage and retrieval efficiency in semiconductor devices.
Benefits: Enhanced performance and efficiency in data storage and retrieval processes, improved overall functionality of semiconductor devices, and potential for increased speed and reliability in electronic systems.
Commercial Applications: This technology has significant commercial potential in the semiconductor industry, particularly in the development of high-performance memory devices and advanced electronic systems.
Questions about the technology: 1. How does the unique support pattern array improve the performance of the semiconductor device? 2. What specific advantages does the memory channel structure offer in terms of data storage and retrieval efficiency?
Original Abstract Submitted
a semiconductor device includes a gate electrode structure including gate electrodes spaced apart in a first direction perpendicular to an upper surface of a substrate, each gate electrode extending in a second direction parallel to the upper surface of the substrate, a memory channel structure, and a support pattern array including support patterns spaced apart in the second direction and a third direction crossing the second direction, wherein each support pattern has a shape including three vertices and three sides, and wherein a first vertex of a first support pattern closest to a second support pattern and a first vertex of the second support pattern closest to the first support pattern are not aligned in the third direction but have different positions in the second direction.
