Samsung electronics co., ltd. (20240381641). VERTICAL MEMORY DEVICES simplified abstract

VERTICAL MEMORY DEVICES

Organization Name

samsung electronics co., ltd.

Inventor(s)

Kyungeun Park of Suwon-si (KR)

Solmi Kwak of Suwon-si (KR)

Jinhyuk Kim of Suwon-si (KR)

Hyeongjin Kim of Suwon-si (KR)

Jeongyong Sung of Suwon-si (KR)

Minsoo Shin of Suwon-si (KR)

Seungjun Shin of Suwon-si (KR)

Joongshik Shin of Suwon-si (KR)

Sunghee Chung of Suwon-si (KR)

Jeehoon Han of Suwon-si (KR)

VERTICAL MEMORY DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240381641 titled 'VERTICAL MEMORY DEVICES

The abstract describes a vertical memory device with gate pattern structures, separation patterns, and channel structures on a common source plate.

• Gate pattern structures extend from one region to another on the common source plate, with adjacent structures spaced apart and including gate patterns and insulation layers.
• First separation patterns fill openings between adjacent gate pattern structures in the first region.
• Second separation patterns fill openings between adjacent gate pattern structures in the second region, with at least one connected to a first separation pattern and having a different shape.
• Channel structures pass through the gate pattern structures in the first region.

Potential Applications: - Memory devices - Semiconductor technology - Data storage systems

Problems Solved: - Efficient vertical memory device design - Improved data storage capabilities - Enhanced semiconductor performance

Benefits: - Higher memory capacity - Faster data access speeds - Increased efficiency in data storage

Commercial Applications: Title: Vertical Memory Devices for Enhanced Data Storage This technology can be used in various commercial applications such as: - Consumer electronics - Cloud computing servers - Data centers

Questions about Vertical Memory Devices: 1. How does the design of the vertical memory device contribute to improved data storage capabilities? The vertical memory device design allows for increased memory capacity and faster data access speeds, enhancing overall performance.

2. What sets this vertical memory device apart from traditional memory devices in terms of design and functionality? The vertical memory device utilizes gate pattern structures, separation patterns, and channel structures on a common source plate, providing a more efficient and compact design for data storage.

Original Abstract Submitted

a vertical memory device may include a common source plate on a substrate including a first region and a second region; gate pattern structures on the common source plate and extending from the first region to the second region, wherein the gate pattern structures include gate patterns and first insulation layers, and wherein the adjacent gate pattern structures are spaced apart from each other; first separation patterns filling first openings between the adjacent gate pattern structures on the first region; second separation patterns filling second openings between the adjacent gate pattern structures on the second region, wherein at least one of the second separation patterns is connected to at least one of the first separation patterns, and wherein the second separation pattern has a shape different from a shape of the first separation pattern; and channel structures passing through the gate pattern structures on the first region.