Samsung electronics co., ltd. (20240379795). SEMICONDUCTOR DEVICES simplified abstract
Contents
SEMICONDUCTOR DEVICES
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SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379795 titled 'SEMICONDUCTOR DEVICES
The semiconductor device described in the abstract consists of various layers and patterns on a substrate, including field insulating layers, buried insulating structures, protective layers, source/drain patterns, and a gate electrode.
- The device features a protective insulating layer between the first lower pattern and the second lower pattern, as well as between the gate electrode and the second field insulating layer.
- Additionally, a protective liner extends around the protective insulating layer to enhance the device's durability and performance.
Potential Applications: This technology can be applied in the manufacturing of advanced semiconductor devices for various electronic applications, such as integrated circuits, microprocessors, and memory chips.
Problems Solved: The technology addresses the need for improved insulation and protection of semiconductor components, enhancing their reliability and longevity in electronic devices.
Benefits: The use of protective layers and insulating structures improves the overall performance and durability of semiconductor devices, leading to enhanced functionality and longevity in electronic applications.
Commercial Applications: This technology has significant commercial potential in the semiconductor industry, where the demand for high-performance and reliable electronic components continues to grow. Manufacturers can leverage this innovation to produce cutting-edge semiconductor devices for a wide range of consumer electronics and industrial applications.
Questions about the technology: 1. How does the protective insulating layer enhance the performance of the semiconductor device? 2. What are the specific advantages of the buried insulating structure in this technology?
Original Abstract Submitted
a semiconductor device comprising: a substrate; a first lower pattern on the substrate; a second lower pattern on the first lower pattern; channel patterns on the second lower pattern; a first field insulating layer on a first side surface of the first lower pattern; a second field insulating layer on a second side surface of the first lower pattern; a buried insulating structure on the first field insulating layer and on side surfaces of the channel patterns; a protective layer on the second field insulating layer; source/drain patterns on sides of each of the channel patterns; and a gate electrode extending around the channel patterns and the buried insulating structure, wherein the protective layer comprises: a protective insulating layer between the first lower pattern and the second lower pattern, and between the gate electrode and the second field insulating layer; and a protective liner extending around the protective insulating layer.
