Samsung electronics co., ltd. (20240379406). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Tae Sung Kang of Suwon-si (KR)
Seung Ho Hong of Suwon-si (KR)
Beom Yong Hwang of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379406 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the patent application includes a substrate with an active region, an element isolation film defining the active region, a recess within the active region, and a gate structure on the active region.
- The gate structure consists of a gate insulating film, a gate stack pattern, and a gate capping pattern stacked sequentially.
- The gate insulating film extends along the upper face of the active region and fills part of the recess.
- The height from the lower face of the substrate to the bottom face of the element isolation film is less than the height to the bottom face of the recess.
Potential Applications: - This technology can be used in the development of advanced semiconductor memory devices. - It may find applications in the manufacturing of high-performance electronic devices.
Problems Solved: - Provides a more efficient and compact design for semiconductor memory devices. - Enhances the performance and reliability of electronic devices.
Benefits: - Improved functionality and performance of semiconductor memory devices. - Increased efficiency in electronic device manufacturing processes.
Commercial Applications: - This technology could be valuable for semiconductor manufacturers looking to enhance the performance of their memory devices. - It may have implications for the development of faster and more reliable electronic devices in various industries.
Questions about the technology: 1. How does this innovation improve the performance of semiconductor memory devices? 2. What potential impact could this technology have on the semiconductor industry as a whole?
Frequently Updated Research: - Stay updated on advancements in semiconductor memory device technology to ensure the latest innovations are incorporated into product development.
Original Abstract Submitted
a semiconductor device is disclosed. the semiconductor memory device comprises a substrate including an active region, an element isolation film disposed in the substrate and that defines the active region, a recess which is disposed in the active region and extends in a first direction, and a gate structure extending in a second direction, on the active region, wherein the gate structure includes a gate insulating film, a gate stack pattern, and a gate capping pattern which are sequentially stacked, wherein the gate insulating film extends along an upper face of the active region, and a part of the gate insulating film fills the recess, and wherein a height from a lower face of the substrate to a bottom face of the element isolation film is less than a height from the lower face of the substrate to a bottom face of the recess.
