Samsung electronics co., ltd. (20240357832). SEMICONDUCTOR DEVICES simplified abstract
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240357832 titled 'SEMICONDUCTOR DEVICES
The semiconductor device described in the abstract includes various structures such as bit line structures, channels, upper gate structures, and a capacitor structure.
- Bit line structures are on a substrate, spaced apart from each other in one direction.
- Channels contact the upper surfaces of the bit line structures and are spaced apart from each other in both directions.
- Upper gate structures surround the channels and are spaced apart in one direction.
- The capacitor structure includes first capacitor electrodes on the channels, a dielectric layer with ferroelectric or anti-ferroelectric material, second capacitor electrode layer, and capacitor plate electrodes.
Potential Applications: - Memory devices - Integrated circuits - Semiconductor technology
Problems Solved: - Enhancing memory storage capacity - Improving semiconductor device performance
Benefits: - Increased data storage capabilities - Enhanced device efficiency - Advanced semiconductor technology
Commercial Applications: Title: Advanced Memory Devices with Enhanced Capacitor Structures This technology can be utilized in the development of high-performance memory devices for various industries such as electronics, telecommunications, and computing.
Questions about the technology: 1. How does the use of ferroelectric or anti-ferroelectric materials in the dielectric layer impact the performance of the semiconductor device? 2. What are the potential challenges in scaling up this technology for mass production?
Original Abstract Submitted
a semiconductor device includes a bit line structures on a substrate, extending in a first direction, and being spaced apart from each other in a second direction; channels contacting upper surfaces of the bit line structures and being spaced apart from each other in the first and second directions; upper gate structures extending in the second direction and surrounding the channels disposed in the second direction, the upper gate structures being spaced apart in the first direction; and a capacitor structure including first capacitor electrodes respectively on the channels; a dielectric layer on the first capacitor electrodes, the dielectric layer including a ferroelectric material or an anti-ferroelectric material; a second capacitor electrode layer on the dielectric layer; and capacitor plate electrodes on the second capacitor electrode layer, the capacitor plate electrodes each extending in the second direction and being spaced apart from each other in the first direction.
