Samsung electronics co., ltd. (20240357810). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Yong Seok Kim of Suwon-si (KR)
Il Gweon Kim of Hwaseong-si (KR)
Hyeoung Won Seo of Yongin-si (KR)
Sung Won Yoo of Hwaseong-si (KR)
Jae Ho Hong of Hwaseong-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240357810 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation: The semiconductor memory device described in the patent application features a unique structure with improved electrical characteristics. It includes a first semiconductor pattern separated from a substrate, a first gate structure extending in one direction and penetrating the first semiconductor pattern, and two conductive connecting lines in different directions connected to the first semiconductor pattern.
- The first gate structure is positioned between the two conductive connecting lines and consists of a gate electrode and a gate insulating film.
- The gate insulating film contains a charge holding film that contacts the first semiconductor pattern.
Key Features and Innovation:
- Unique semiconductor memory device structure with improved electrical characteristics.
- First gate structure with gate electrode and gate insulating film.
- Charge holding film in the gate insulating film for enhanced performance.
Potential Applications: The technology can be applied in various semiconductor memory devices, potentially improving their performance and reliability.
Problems Solved: The technology addresses issues related to electrical characteristics in semiconductor memory devices, enhancing their overall efficiency.
Benefits:
- Improved electrical characteristics in semiconductor memory devices.
- Enhanced performance and reliability.
- Potential for increased efficiency in memory operations.
Commercial Applications: The technology could have significant commercial applications in the semiconductor industry, particularly in the development of advanced memory devices for various electronic devices.
Questions about Semiconductor Memory Device: 1. What are the specific advantages of the unique structure described in the patent application? 2. How does the inclusion of the charge holding film in the gate insulating film contribute to the improved electrical characteristics of the semiconductor memory device?
Original Abstract Submitted
a semiconductor memory device having improved electrical characteristics is provided. the semiconductor memory device comprises a first semiconductor pattern separated from a substrate in a first direction, a first gate structure extending in the first direction and penetrating the first semiconductor pattern, a first conductive connecting line connected to the first semiconductor pattern and extending in a second direction different from the first direction, and a second conductive connecting line connected to the first semiconductor pattern. the first gate structure is between the first conductive connecting line and the second conductive connecting line, the first gate structure includes a first gate electrode and a first gate insulating film, and the first gate insulating film includes a first charge holding film contacting with the first semiconductor pattern.
