Samsung electronics co., ltd. (20240357802). SEMICONDUCTOR MEMORY DEVICES simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICES
Organization Name
Inventor(s)
SEMICONDUCTOR MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240357802 titled 'SEMICONDUCTOR MEMORY DEVICES
The semiconductor memory device described in the abstract includes a substrate with active patterns, a gate structure intersecting the active patterns, bit-line structures, first contacts, insulating patterns, and second contacts.
- The device features a unique arrangement of bit-line structures and first contacts, alternating with each other on the substrate.
- Insulating patterns are placed on the bit-line structures, with one insulating pattern positioned in a trench exposing a sidewall of a first contact and part of the gate structure.
- Second contacts are then placed on the first contacts, with one second contact positioned in a trench exposing a sidewall of the insulating pattern and the upper surface of the first contact.
- The insulating pattern overlaps the upper surface of a bit-line structure, extending along the sidewalls of the trenches and contacting the first and second contacts.
Potential Applications: - This technology can be applied in various semiconductor memory devices, improving their performance and efficiency. - It can enhance the storage capacity and speed of data retrieval in electronic devices.
Problems Solved: - The innovation addresses the need for more compact and efficient semiconductor memory devices. - It solves issues related to data storage and retrieval speed in electronic devices.
Benefits: - Increased storage capacity and faster data retrieval. - Enhanced efficiency and performance of semiconductor memory devices.
Commercial Applications: - The technology can be utilized in smartphones, computers, and other electronic devices requiring high-speed data storage and retrieval capabilities.
Questions about the technology: 1. How does the unique arrangement of bit-line structures and first contacts improve the performance of the semiconductor memory device? 2. What specific advantages does the placement of insulating patterns on the bit-line structures provide in terms of efficiency and functionality?
Original Abstract Submitted
a semiconductor memory device comprising: a substrate including active patterns; a gate structure intersecting the active patterns; bit-line structures on the substrate; first contacts, wherein the bit-line structures and the first contacts are alternately arranged with each other; insulating patterns respectively disposed on the bit-line structures, wherein an insulating pattern among the insulating patterns is disposed in a first trench exposing a sidewall of a first contact among the first contacts and at least a portion of the gate structure; and second contacts disposed on the first contacts, wherein a second contact among the second contacts is disposed in a second trench exposing a sidewall of the insulating pattern and an upper surface of the first contact, wherein the insulating pattern overlaps an upper surface of a bit-line structure among the bit-line structures and extends along sidewalls of the first and second trenches and contacts the first and second contacts.
