Samsung electronics co., ltd. (20240357799). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Choong Hyun Lee of Suwon-si (KR)
Joon Cheol Kim of Suwon-si (KR)
Byoung Wook Jang of Suwon-si (KR)
Young-Seung Cho of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240357799 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract includes a substrate with a cell region and a peripheral region, as well as a cell region isolation layer that separates the two regions. Additionally, there is an isolation active region surrounded by the cell region isolation layer, and a bit line structure on the cell region.
- The innovation involves the use of a cell region isolation layer to improve performance and reliability of the memory device.
- The device includes a cell conductive line and a cell gate electrode in the substrate of the cell region, enhancing its functionality.
- The bit line structure, with the cell conductive line and cell gate electrode, allows for efficient data storage and retrieval.
- The isolation active region ensures proper isolation of the cell region, reducing interference and enhancing overall performance.
- The design of the memory device aims to optimize its operation and increase its longevity.
Potential Applications: - This technology can be used in various electronic devices requiring high-performance memory capabilities. - It can be applied in data storage systems, mobile devices, and computing devices to enhance their memory functions.
Problems Solved: - Addresses the need for improved performance and reliability in semiconductor memory devices. - Solves issues related to interference and data corruption in memory systems.
Benefits: - Improved performance and reliability of memory devices. - Enhanced data storage and retrieval capabilities. - Reduction in interference and data corruption.
Commercial Applications: Title: Advanced Semiconductor Memory Device for Enhanced Performance This technology can be utilized in the production of high-speed and reliable memory modules for consumer electronics, data centers, and industrial applications. The improved performance and reliability offered by this memory device can lead to increased efficiency and productivity in various sectors.
Questions about Semiconductor Memory Device: 1. How does the cell region isolation layer contribute to the performance and reliability of the memory device? The cell region isolation layer helps in isolating the cell region from the peripheral region, reducing interference and enhancing overall functionality.
2. What are the potential commercial applications of this advanced semiconductor memory device? This technology can be applied in consumer electronics, data centers, and industrial systems to improve memory performance and reliability.
Original Abstract Submitted
there is provided a semiconductor memory device capable of improving performance and reliability of an element. the semiconductor memory device includes a substrate including a cell region and a peripheral region, a cell region isolation layer in the substrate, isolating the cell region from the peripheral region, an isolation active region surrounded by the cell region isolation layer, a bit line structure on the cell region, including a cell conductive line and a cell gate electrode in the substrate of the cell region, crossing the cell conductive line.
