Samsung electronics co., ltd. (20240357796). SEMICONDUCTOR MEMORY DEVICES simplified abstract
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SEMICONDUCTOR MEMORY DEVICES
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SEMICONDUCTOR MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240357796 titled 'SEMICONDUCTOR MEMORY DEVICES
The semiconductor memory device described in the abstract includes a substrate, a channel region, source/drain regions, a gate electrode, a conductive line, and a capacitor structure.
- The device has a substrate where the components are built upon.
- A channel region is present on the substrate for data storage.
- First and second source/drain regions are electrically connected to the channel region.
- A gate electrode extends in a first direction on the channel region.
- A conductive line intersects the first direction and is connected to the second source/drain region.
- A capacitor structure is electrically connected to the first source/drain region on the substrate.
Potential Applications: - This technology can be used in various electronic devices requiring memory storage. - It can be applied in smartphones, computers, and other digital devices for data storage purposes.
Problems Solved: - Provides a compact and efficient way to store data in semiconductor devices. - Enhances the performance and capacity of memory storage in electronic devices.
Benefits: - Improved data storage capacity and efficiency. - Enhanced performance of electronic devices. - Compact design for space-saving in devices.
Commercial Applications: Title: Advanced Semiconductor Memory Device for Enhanced Data Storage This technology can be commercially utilized in the production of smartphones, computers, tablets, and other electronic devices requiring efficient memory storage solutions. The market implications include improved device performance, increased data storage capacity, and enhanced user experience.
Questions about Semiconductor Memory Device: 1. How does the capacitor structure in the device contribute to its overall performance? The capacitor structure in the semiconductor memory device helps in storing and retrieving data efficiently by providing a stable electrical charge.
2. What are the potential future advancements in semiconductor memory devices that could further enhance data storage capabilities? Future advancements in semiconductor memory devices may focus on increasing storage capacity, improving data transfer speeds, and reducing power consumption for more energy-efficient devices.
Original Abstract Submitted
provided is a semiconductor memory device. the semiconductor memory device includes a substrate, a channel region on the substrate, first and second source/drain regions electrically connected to the channel region, a gate electrode that extends in a first direction and is on the channel region, a conductive line that extends in a second direction intersecting the first direction and is electrically connected to the second source/drain region, and a capacitor structure electrically connected to the first source/drain region on the substrate. the capacitor structure may include a plurality of first electrodes stacked and spaced apart from each other in a third direction perpendicular to an upper surface of the substrate, a plurality of trenches extending into the plurality of first electrodes, a capacitor dielectric film that extends along side walls of each of the plurality of trenches, and a plurality of second electrodes in the plurality of trenches, respectively.
