Samsung electronics co., ltd. (20240355362). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Han Seong Shin of Suwon-si (KR)
Chan-Sic Yoon of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240355362 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract includes a substrate with an element isolation layer, a bit line extending in a first direction on the substrate, a cell buffer insulating layer between the bit line and the substrate, a lower storage contact with a semiconductor epitaxial pattern, a storage pad connected to the lower storage contact, and an information storage unit connected to the storage pad.
- The device features a unique structure with upper and lower cell buffer insulating layers between the bit line and the substrate.
- The lower storage contact is positioned on multiple sides of the bit line, enhancing storage capacity.
- The storage pad and information storage unit provide a means for storing and accessing data efficiently.
- The semiconductor epitaxial pattern on the lower storage contact contributes to the device's performance and reliability.
- The overall design of the device aims to optimize memory storage and retrieval processes.
Potential Applications: - This technology can be applied in various electronic devices requiring semiconductor memory components. - It can be used in data storage systems, mobile devices, and computing equipment.
Problems Solved: - Addresses the need for efficient and reliable semiconductor memory devices. - Improves data storage capacity and access speed.
Benefits: - Enhanced memory storage capabilities. - Improved data access and retrieval efficiency. - Increased reliability and performance of semiconductor memory devices.
Commercial Applications: Title: Advanced Semiconductor Memory Device for Enhanced Data Storage This technology can be utilized in the development of high-performance data storage solutions for consumer electronics, servers, and other computing devices. Its innovative design offers improved memory capacity and speed, making it a valuable component in the semiconductor industry.
Questions about Semiconductor Memory Device: 1. How does the unique structure of the device contribute to its performance and efficiency? 2. What are the potential commercial applications of this advanced semiconductor memory technology?
Frequently Updated Research: Stay updated on the latest advancements in semiconductor memory technology to ensure optimal performance and reliability in data storage applications. Regularly check for new research findings and developments in the field to stay ahead of the competition.
Original Abstract Submitted
a semiconductor memory device includes a substrate comprising an element isolation layer, a bit line that extends on the substrate in a first direction, a cell buffer insulating layer between the bit line and the substrate and comprising an upper cell buffer insulating layer and a lower cell buffer insulating layer, a lower storage contact disposed on a plurality of sides of the bit line and comprising a semiconductor epitaxial pattern, a storage pad on the lower storage contact and connected to the lower storage contact and an information storage unit on the storage pad and connected to the storage pad, wherein the upper cell buffer insulating layer is between the lower cell buffer insulating layer and the bit line, and each of the lower cell buffer insulating layer and the upper cell buffer insulating layer comprises an upper surface and a lower surface that are opposite to each other.
