Samsung electronics co., ltd. (20240349622). TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS simplified abstract
Contents
TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS
Organization Name
Inventor(s)
Jaewoo Jeong of Los Altos CA (US)
Tiar Ikhtiar of San Jose CA (US)
Panagiotis Charilaos Filippou of Fremont CA (US)
Chirag Garg of San Jose CA (US)
Mahesh Govind Samant of San Jose CA (US)
TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240349622 titled 'TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS
The magnetic memory device described in the patent application consists of a substrate, a seed layer, a chemical templating layer, and a first magnetic layer.
- The seed layer is composed of SCN, MNN, or MGO oriented in the (001) direction.
- The chemical templating layer contains a binary alloy with a CuAu prototype structure or a B2F prototype structure.
- The first magnetic layer is made of a Heusler compound with perpendicular magnetic anisotropy.
Potential Applications:
- Data storage devices
- Magnetic sensors
- Spintronics applications
Problems Solved:
- Enhanced magnetic memory performance
- Improved data retention capabilities
- Increased efficiency in magnetic data storage
Benefits:
- Higher data storage density
- Faster data access speeds
- Enhanced reliability of magnetic memory devices
Commercial Applications:
- Manufacturing of hard disk drives
- Production of magnetic random-access memory (MRAM) devices
- Integration into magnetic field sensors for various industries
Questions about Magnetic Memory Devices: 1. How does the orientation of the seed layer impact the performance of the magnetic memory device? 2. What are the key differences between the CuAu prototype structure and the B2F prototype structure in the chemical templating layer?
Frequently Updated Research: Ongoing studies focus on optimizing the composition of the chemical templating layer to further improve the magnetic properties of the memory device.
Original Abstract Submitted
a magnetic memory device includes a substrate, a seed layer above the substrate, a chemical templating layer above the seed layer, and a first magnetic layer above the chemical templating layer. the seed layer includes scn, mnn, or mgo substantially oriented in (001) direction. the chemical templating layer includes a binary alloy having a cuau prototype structure or a bifprototype structure. the first magnetic layer includes a heusler compound having perpendicular magnetic anisotropy.
