Samsung electronics co., ltd. (20240349615). MAGNETIC MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract
Contents
MAGNETIC MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
BYOUNG JAE Bae of Suwon-si (KR)
MAGNETIC MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240349615 titled 'MAGNETIC MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
The abstract describes a magnetic memory device and a method for fabricating it. The device includes a substrate, insulating layers, a memory cell with magnetic patterns, a tunnel barrier pattern, and a re-deposition insertion layer.
- The magnetic memory device consists of a memory cell with first and second magnetic patterns, a tunnel barrier pattern, and a re-deposition insertion layer.
- The re-deposition insertion layer includes a re-deposition insulating layer, a mixed layer, and a re-deposition byproduct layer.
- The mixed layer contains materials from both the re-deposition insulating layer and the re-deposition byproduct layer.
- The components are stacked sequentially on the lower insulating layer to form the magnetic memory device.
- The re-deposition insertion layer extends along the upper surface of the lower insulating layer from the side of the memory cell.
Potential Applications: - Data storage devices - Magnetic sensors - Magnetic random-access memory (MRAM)
Problems Solved: - Improved data storage capacity - Enhanced magnetic memory performance - Efficient fabrication process
Benefits: - Higher data storage density - Faster data access speeds - Increased reliability and durability
Commercial Applications: Title: "Advanced Magnetic Memory Devices for Next-Generation Data Storage" This technology can be utilized in the development of high-performance data storage devices for various industries, including telecommunications, consumer electronics, and data centers. The market implications include increased demand for faster and more reliable data storage solutions.
Questions about Magnetic Memory Devices: 1. How does the re-deposition insertion layer contribute to the performance of the magnetic memory device? The re-deposition insertion layer enhances the efficiency and reliability of data storage by facilitating the stacking of magnetic patterns and insulating layers in the memory cell. 2. What are the key advantages of using magnetic memory devices in comparison to traditional storage technologies? Magnetic memory devices offer higher data storage density, faster access speeds, and increased durability, making them ideal for applications requiring efficient and reliable data storage solutions.
Original Abstract Submitted
a magnetic memory device and a method for fabricating the same are provided. the magnetic memory device includes a substrate, a lower insulating layer on the substrate, a memory cell including a first magnetic pattern, a tunnel barrier pattern and a second magnetic pattern, which are sequentially stacked on the lower insulating layer, and a re-deposition insertion layer extending along an upper surface of the lower insulating layer from a side of the memory cell, wherein the re-deposition insertion layer includes a re-deposition insulating layer, a mixed layer and a re-deposition byproduct layer, which are sequentially stacked on the lower insulating layer, and the mixed layer includes both a material included in the re-deposition insulating layer and a material included in the re-deposition byproduct layer.
