Samsung electronics co., ltd. (20240349511). CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract
Contents
CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
Organization Name
Inventor(s)
Hyungsuk Jung of Suwon-si (KR)
CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240349511 titled 'CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
The abstract describes a capacitor with a unique dielectric layer that includes a ferroelectric layer and an auxiliary portion with a low energy band gap.
- The capacitor consists of a first electrode and a second electrode separated by the dielectric layer.
- The dielectric layer contains a ferroelectric layer and an auxiliary portion with an energy band gap lower than 4.0 eV.
- The auxiliary portion is designed to enhance the performance of the capacitor.
Potential Applications:
- Energy storage systems
- Electronic devices
- Power electronics
Problems Solved:
- Improved energy storage capacity
- Enhanced efficiency of electronic devices
Benefits:
- Higher energy density
- Increased performance of electronic devices
- Longer lifespan of capacitors
Commercial Applications:
- Capacitor manufacturing industry
- Consumer electronics market
- Renewable energy sector
Questions about the technology: 1. How does the low energy band gap of the auxiliary portion impact the performance of the capacitor? 2. What are the specific advantages of using a ferroelectric layer in the dielectric layer of the capacitor?
Original Abstract Submitted
a capacitor according to at least one embodiment may include a first electrode and a second electrode spaced apart from each other, and a dielectric layer disposed between the first electrode and the second electrode and including a ferroelectric layer and an auxiliary portion disposed in the ferroelectric layer, wherein an energy band gap eg of the auxiliary portion may be lower than about 4.0 ev.
