Samsung electronics co., ltd. (20240349487). GATE STRUCTURE AND METHOD OF FORMING THE SAME, SEMICONDUCTOR DEVICE INCLUDING THE GATE STRUCTURE AND METHOD OF MANUFACTURING THE SAME simplified abstract
GATE STRUCTURE AND METHOD OF FORMING THE SAME, SEMICONDUCTOR DEVICE INCLUDING THE GATE STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Byounghoon Lee of Suwon-si (KR)
GATE STRUCTURE AND METHOD OF FORMING THE SAME, SEMICONDUCTOR DEVICE INCLUDING THE GATE STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240349487 titled 'GATE STRUCTURE AND METHOD OF FORMING THE SAME, SEMICONDUCTOR DEVICE INCLUDING THE GATE STRUCTURE AND METHOD OF MANUFACTURING THE SAME
The abstract describes a gate structure in a semiconductor device, consisting of a first conductive pattern, a second conductive pattern made of doped polysilicon, and a gate insulation pattern on the sidewalls of both patterns. A capping layer containing metal grains is located beneath the first conductive pattern, with some metal grains extending from the upper surface of the capping layer to the lower surface of the second conductive pattern.
- The gate structure includes a first conductive pattern, a second conductive pattern with doped polysilicon, and a gate insulation pattern.
- A capping layer beneath the first conductive pattern contains metal grains that extend to the second conductive pattern.
- The metal grains make contact with both the upper surface of the capping layer and the lower surface of the second conductive pattern.
Potential Applications: - This gate structure can be used in various semiconductor devices such as transistors and integrated circuits. - It can improve the performance and efficiency of electronic devices by enhancing gate control.
Problems Solved: - Provides better gate control and insulation in semiconductor devices. - Enhances the overall performance and reliability of electronic devices.
Benefits: - Improved conductivity and insulation properties. - Enhanced performance and efficiency of semiconductor devices. - Increased reliability and longevity of electronic components.
Commercial Applications: Title: Advanced Gate Structure for Semiconductor Devices This technology can be applied in the manufacturing of transistors, integrated circuits, and other semiconductor devices. It has the potential to revolutionize the electronics industry by improving device performance and reliability.
Questions about the technology: 1. How does the presence of metal grains in the capping layer enhance the performance of the gate structure? 2. What are the specific impurities used to dope the polysilicon in the second conductive pattern?
Original Abstract Submitted
a gate structure may include a first conductive pattern, a second conductive pattern on the first conductive pattern and including polysilicon doped with impurities, and a gate insulation pattern on sidewalls of the first and second conductive patterns. a capping layer including a semiconductor material or an insulating material may be disposed under the first conductive pattern. the first conductive pattern may include metal grains. at least one of the metal grains may extend from an upper surface of the capping layer to a lower surface of the second conductive pattern, and may contact the upper surface of the capping layer and the lower surface of the second conductive pattern.
