Samsung electronics co., ltd. (20240347609). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
DONGHOON Hwang of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240347609 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application consists of a substrate with an active pattern, first and second source/drain patterns overlapping with the active pattern, a separation insulating layer between the source/drain patterns, and first and second gate electrodes separated by the insulating layer.
- The separation insulating layer's top surface is higher than the top surfaces of the gate electrodes.
- The device is designed to improve the performance and efficiency of semiconductor components.
- By separating the gate electrodes with a higher insulating layer, the device can reduce interference and improve overall functionality.
- This innovation aims to enhance the functionality and reliability of semiconductor devices in various applications.
- The design of the device allows for better control and management of electrical currents within the semiconductor component.
Potential Applications: The technology can be applied in various semiconductor devices such as transistors, integrated circuits, and microprocessors.
Problems Solved: The technology addresses issues related to interference, performance, and efficiency in semiconductor devices.
Benefits: Improved performance, reduced interference, enhanced efficiency, and better control of electrical currents.
Commercial Applications: The technology can be utilized in the manufacturing of advanced electronic devices, leading to improved performance and reliability in consumer electronics, telecommunications, and industrial applications.
Questions about the technology: 1. How does the separation insulating layer contribute to the overall performance of the semiconductor device? 2. What specific advantages does the design of this semiconductor device offer compared to traditional designs?
Original Abstract Submitted
a semiconductor device includes a substrate including an active pattern, first and second source/drain patterns overlapping with the active pattern, a separation insulating layer between the first and second source/drain patterns, and first and second gate electrodes spaced apart from each other with the separation insulating layer interposed therebetween. a level of a top surface of the separation insulating layer is higher than a level of a top surface of the first gate electrode and a level of a top surface of the second gate electrode.
