Samsung electronics co., ltd. (20240347089). FE-X TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS ON TOP OF A TUNNEL BARRIER simplified abstract
FE-X TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS ON TOP OF A TUNNEL BARRIER
Organization Name
Inventor(s)
Jaewoo Jeong of Los Altos CA (US)
Tiar Ikhtiar of San Jose CA (US)
Panagiotis Charilaos Filippou of San Jose CA (US)
Chirag Garg of San Jose CA (US)
Mahesh Govind Samant of San Jose CA (US)
FE-X TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS ON TOP OF A TUNNEL BARRIER - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240347089 titled 'FE-X TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS ON TOP OF A TUNNEL BARRIER
The abstract describes a magnetic random-access memory (MRAM) device with a unique structure involving a substrate, bottom magnetic reference layer, tunnel barrier layer, and top magnetic free layer with a chemical templating layer and a magnetic layer.
- The top magnetic free layer includes a chemical templating layer with a binary alloy of FeX and a magnetic layer with a Heusler compound.
- The chemical templating layer may have a bifprototype structure with Y in a range from 0.9 to 3.3%.
- The magnetic layer has substantially perpendicular magnetic anisotropy.
Potential Applications: - Data storage in electronic devices - Non-volatile memory applications - High-speed computing systems
Problems Solved: - Improved data retention and reliability in MRAM devices - Enhanced magnetic anisotropy for stable data storage
Benefits: - Faster access times compared to traditional memory technologies - Lower power consumption for improved energy efficiency - Increased data security and reliability
Commercial Applications: Title: "Innovative MRAM Technology for Enhanced Data Storage" This technology can be utilized in various commercial applications such as consumer electronics, automotive systems, and industrial automation for efficient data storage and retrieval.
Prior Art: Researchers can explore prior patents related to MRAM devices, magnetic anisotropy, and data storage technologies to understand the evolution of this innovation.
Frequently Updated Research: Researchers may find updated studies on magnetic materials, thin film deposition techniques, and MRAM device optimization for improved performance and reliability.
Questions about MRAM Technology: 1. How does the chemical templating layer contribute to the magnetic properties of the MRAM device? - The chemical templating layer helps to control the crystalline structure of the magnetic layer, influencing its magnetic anisotropy and stability.
2. What advantages does the Heusler compound in the magnetic layer offer in terms of data storage? - The Heusler compound provides substantially perpendicular magnetic anisotropy, which enhances the stability and reliability of data storage in the MRAM device.
Original Abstract Submitted
a magnetic random-access memory (mram) device includes a substrate, a bottom magnetic reference layer on the substrate, a tunnel barrier layer above the bottom magnetic reference layer, and a top magnetic free layer above the tunnel barrier layer. the top magnetic free layer includes a chemical templating layer on the tunnel barrier layer and a magnetic layer on the chemical templating layer. the chemical templating layer includes a binary alloy of fex which may have a bifprototype structure in which y is in a range from 0.9 to 3.3, and the magnetic layer includes a heusler compound having substantially perpendicular magnetic anisotropy.
