Samsung electronics co., ltd. (20240341100). VERTICAL MEMORY DEVICES INCLUDING DIVISION PATTERNS simplified abstract
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VERTICAL MEMORY DEVICES INCLUDING DIVISION PATTERNS
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VERTICAL MEMORY DEVICES INCLUDING DIVISION PATTERNS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240341100 titled 'VERTICAL MEMORY DEVICES INCLUDING DIVISION PATTERNS
The semiconductor device described in the abstract consists of gate electrode structures, a first division pattern, a second division pattern, and a memory channel structure. The gate electrode structures are spaced apart from each other on a substrate in a specific orientation, with gate electrodes extending in different directions. The first division pattern and second division pattern are also present on the substrate, with the memory channel structure extending through each gate electrode structure.
- Gate electrode structures with spaced-apart gate electrodes on a substrate
- First division pattern between gate electrode structures
- Second division pattern on sidewalls of gate electrode structures
- Memory channel structure extending through each gate electrode structure
Potential Applications: - Memory devices - Semiconductor manufacturing - Integrated circuits
Problems Solved: - Efficient memory channel structure design - Improved semiconductor device performance
Benefits: - Enhanced memory storage capabilities - Increased efficiency in semiconductor devices
Commercial Applications: Title: Advanced Memory Devices for Semiconductor Industry This technology can be utilized in the production of memory devices for various electronic applications, enhancing performance and storage capacity in the semiconductor industry.
Questions about the technology: 1. How does the design of the gate electrode structures contribute to the overall efficiency of the semiconductor device? 2. What specific advantages does the memory channel structure offer in terms of device performance and functionality?
Original Abstract Submitted
a semiconductor device includes gate electrode structures, a first division pattern, a second division pattern, and a memory channel structure. each gate electrode structure includes gate electrodes spaced apart from each other on a substrate in a first direction substantially perpendicular to an upper surface of the substrate. each gate electrode extends in a second direction substantially parallel to the upper surface of the substrate. the gate electrode structures are spaced apart from each other in a third direction substantially parallel to the upper surface and crossing the second direction. the first division pattern extends in the second direction between the gate electrode structures on the substrate. the second division pattern extends in the third direction on the substrate, and is on sidewalls of end portions in the second direction of the gate electrode structures. the memory channel structure extends in the first direction through each gate electrode structure.
