Samsung electronics co., ltd. (20240341083). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Jae Hyun Choi of Suwon-si (KR)
Hyun Seung Choi of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240341083 titled 'SEMICONDUCTOR MEMORY DEVICE
The patent application describes active regions defined by a device isolation layer on a substrate, with a word line crossing the active regions and a gate dielectric layer between the word line and the active regions. A capping insulating pattern covers the upper surface of the word line and a bit line on the word line. The word line consists of a first conductive pattern and a second conductive pattern, with the first pattern including a first metal element and the second pattern including the first metal element, a work function adjustment element, and a diffusion barrier element. The atomic radius of the diffusion barrier element is smaller than that of the first metal element.
- Active regions defined by device isolation layer
- Word line and gate dielectric layer provided
- Capping insulating pattern covering word line and bit line
- Word line includes first and second conductive patterns
- First pattern includes first metal element
- Second pattern includes first metal element, work function adjustment element, and diffusion barrier element
Potential Applications: - Semiconductor manufacturing - Memory devices - Integrated circuits
Problems Solved: - Enhanced performance and reliability of semiconductor devices - Improved conductivity and durability of word lines
Benefits: - Increased efficiency in data storage and processing - Extended lifespan of electronic devices - Higher quality and performance of integrated circuits
Commercial Applications: Title: Advanced Semiconductor Technology for Enhanced Device Performance This technology can be applied in the production of memory chips, microprocessors, and other semiconductor devices, leading to faster and more reliable electronic products. The market implications include improved competitiveness for manufacturers and better user experience for consumers.
Questions about Advanced Semiconductor Technology: 1. How does the diffusion barrier element contribute to the overall performance of the semiconductor device? 2. What are the potential cost implications of implementing this advanced technology in semiconductor manufacturing processes?
Frequently Updated Research: Researchers are constantly exploring new materials and techniques to further improve the efficiency and reliability of semiconductor devices. Stay updated on the latest advancements in this field to leverage the full potential of this technology.
Original Abstract Submitted
active regions defined by device isolation layer are provided on a substrate. a word line crossing the active regions and a gate dielectric layer between the word line and the active regions are provided. a capping insulating pattern covering an upper surface of the word line and a bit line on the word line are provided. the word line may include a first conductive pattern and a second conductive pattern on the first conductive pattern. the first conductive pattern may include a first metal element. the second conductive pattern may include the first metal element, a work function adjustment element, and a diffusion barrier element. an atomic radius of the diffusion barrier element may be smaller than an atomic radius of the first metal element.
