Samsung electronics co., ltd. (20240339536). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jin Young Choi of SUWON-SI (KR)
Woo Sung Park of SUWON-SI (KR)
Han Young Song of SUWON-SI (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339536 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes various components such as a back interlayer insulating film, a back wiring line, a fin-shaped pattern, a field insulating film, a source/drain pattern, a source/drain contact, and a contact connecting via.
- The back interlayer insulating film provides insulation between different layers of the semiconductor device.
- The fin-shaped pattern is located on the first surface of the back wiring line, providing a structural element for the device.
- The field insulating film is placed on top of the fin-shaped pattern, further insulating and protecting the components.
- The source/drain pattern is positioned on the fin-shaped pattern, playing a crucial role in the device's functionality.
- The source/drain contact is connected to the source/drain pattern, facilitating electrical connections within the device.
- The contact connecting via connects the back wiring line and the source/drain contact, ensuring proper electrical conductivity.
Potential Applications: - This technology can be used in various semiconductor devices such as integrated circuits, microprocessors, and memory chips.
Problems Solved: - Provides efficient electrical connections within the semiconductor device. - Ensures proper insulation and protection of sensitive components. - Enhances the overall performance and reliability of the device.
Benefits: - Improved functionality and performance of semiconductor devices. - Enhanced durability and longevity of the device. - Streamlined manufacturing processes for semiconductor products.
Commercial Applications: - This technology can be applied in the production of advanced electronic devices for various industries such as telecommunications, computing, and consumer electronics.
Questions about the technology: 1. How does the contact connecting via contribute to the overall functionality of the semiconductor device? 2. What are the specific advantages of using a fin-shaped pattern in semiconductor devices?
Original Abstract Submitted
a semiconductor device includes a back interlayer insulating film, a back wiring line in the back interlayer insulating film, a fin-shaped pattern on a first surface of the back wiring line, a field insulating film disposed on the fin-shaped pattern, a source/drain pattern on the fin-shaped pattern, a source/drain contact disposed on the source/drain pattern and connected to the source/drain pattern and a contact connecting via connecting the back wiring line and the source/drain contact, and is in contact with the back wiring line. the contact connecting via includes a first surface connected to the source/drain contact, and a second surface contacted to the back wiring line. a height from a second surface of the back wiring line to an upper surface of the field insulating film is smaller than a height from the second surface of the back wiring line to the first surface of the contact connecting via.
