Samsung electronics co., ltd. (20240339454). STANDARD CELLS, INTEGRATED CIRCUITS INCLUDING THE SAME AND DESIGN METHODS THEREOF simplified abstract
Contents
STANDARD CELLS, INTEGRATED CIRCUITS INCLUDING THE SAME AND DESIGN METHODS THEREOF
Organization Name
Inventor(s)
Hyunchul Hwang of Suwon-si (KR)
Dae Seong Lee of Suwon-si (KR)
STANDARD CELLS, INTEGRATED CIRCUITS INCLUDING THE SAME AND DESIGN METHODS THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339454 titled 'STANDARD CELLS, INTEGRATED CIRCUITS INCLUDING THE SAME AND DESIGN METHODS THEREOF
The abstract describes a standard cell with multiple regions, including a first region with a first active region, a second region with a second active region wider than the first, and a gate electrode perpendicular to the active regions.
- The first transistor in the cell has a channel with the width of the first active region, while the second transistor has a channel with the width of the second active region.
- The first and second regions contact in a direction perpendicular to the active regions, with the same width in that direction.
Potential Applications: - Integrated circuits - Semiconductor devices - Electronics manufacturing
Problems Solved: - Efficient use of space in standard cells - Optimization of transistor channels for different active region widths
Benefits: - Improved performance in integrated circuits - Enhanced functionality in semiconductor devices - Streamlined electronics manufacturing processes
Commercial Applications: Title: "Advanced Standard Cell Technology for Enhanced Integrated Circuits" This technology can be utilized in the production of various electronic devices, such as smartphones, computers, and IoT devices, to improve their performance and efficiency.
Prior Art: Readers can explore prior art related to standard cell design, semiconductor manufacturing, and integrated circuit technologies to understand the evolution of similar innovations.
Frequently Updated Research: Stay updated on the latest advancements in standard cell design, semiconductor materials, and integrated circuit technologies to enhance your understanding of this field.
Questions about Standard Cell Technology: 1. How does the width of the active regions impact the performance of transistors in a standard cell? 2. What are the key considerations in designing gate electrodes for standard cells to optimize transistor channels?
Original Abstract Submitted
a standard cell includes a plurality of regions, which includes a first region including a first active region extending in a first direction and having a first width, a second region including a second active region extending in the first direction and having a second width greater than the first width, and a first gate electrode extending in a second direction perpendicular to the first direction, and a first transistor corresponding to at least a portion of the first active region and the first gate electrode includes a first channel having the first width, a second transistor corresponding to at least a portion of the second active region and the first gate electrode includes a second channel having the second width, and the first region and the second region contact in the second direction and have the same width with respect to the second direction.
