Samsung electronics co., ltd. (20240339451). SEMICONDUCTOR DEVICE INCLUDING A FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE INCLUDING A FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
JUNGGIL Yang of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE INCLUDING A FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339451 titled 'SEMICONDUCTOR DEVICE INCLUDING A FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME
The semiconductor device described in the patent application consists of first and second active patterns, a first channel pattern with first semiconductor patterns, a second channel pattern with second semiconductor patterns, a gate electrode on the first and second channel patterns, and a gate dielectric layer between the gate electrode and the first and second channel patterns. The gate electrode includes a first inner gate electrode between the first semiconductor patterns, a second inner gate electrode between the second semiconductor patterns, and an outer gate electrode outside the first and second semiconductor patterns. The first and second inner gate electrodes are located on the bottom surfaces of the uppermost first and second semiconductor patterns, while the outer gate electrode is on the top surfaces and sidewalls of the uppermost first and second semiconductor patterns. The first and second inner gate electrodes have different work functions.
- First and second active patterns
- First and second channel patterns with semiconductor patterns
- Gate electrode on channel patterns
- Gate dielectric layer between gate electrode and channel patterns
- Inner and outer gate electrodes with different work functions
Potential Applications: - Advanced semiconductor devices - High-performance electronics - Integrated circuits
Problems Solved: - Enhanced performance of semiconductor devices - Improved efficiency in electronics
Benefits: - Increased speed and efficiency in electronic devices - Enhanced functionality of integrated circuits
Commercial Applications: Title: Advanced Semiconductor Devices for High-Performance Electronics This technology can be utilized in the development of cutting-edge electronic devices, leading to faster and more efficient performance in various industries such as telecommunications, computing, and consumer electronics.
Questions about the technology: 1. How does the different work functions of the inner gate electrodes impact the performance of the semiconductor device? 2. What are the potential challenges in scaling up the production of semiconductor devices with this design?
Original Abstract Submitted
disclosed are semiconductor devices and their fabricating methods. the semiconductor device comprises first and second active patterns, a first channel pattern including first semiconductor patterns, a second channel pattern including second semiconductor patterns, a gate electrode on the first and second channel patterns, and a gate dielectric layer between the gate electrode and the first and second channel patterns. the gate electrode includes a first inner gate electrode between the first semiconductor patterns, a second inner gate electrode between the second semiconductor patterns, and an outer gate electrode outside the first and second semiconductor patterns. the first and second inner gate electrodes are on bottom surfaces of uppermost first and second semiconductor patterns. the outer gate electrode is on top surfaces and sidewalls of the uppermost first and second semiconductor patterns. the first and second inner gate electrodes have different work functions.
