Samsung electronics co., ltd. (20240339395). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Byungchul Kang of Suwon-si (KR)
Chunghwan Shin of Suwon-si (KR)
Seongdong Lim of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339395 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation:
The semiconductor device described in the patent application consists of various patterns and structures that enable its functionality.
- The device includes a substrate with an active pattern, a channel pattern, semiconductor patterns, source/drain pattern, gate electrode, inner electrodes, outer electrode, and gate contact structure.
- The semiconductor patterns are vertically stacked and spaced apart from each other.
- The gate contact structure consists of a lower gate contact on the outer electrode and an upper gate contact on the lower gate contact.
- The upper gate contact does not include the nucleation pattern present in the lower gate contact.
Key Features and Innovation:
- Vertically stacked and spaced apart semiconductor patterns.
- Gate contact structure with lower and upper gate contacts.
- Exclusion of nucleation pattern in the upper gate contact.
Potential Applications:
- Advanced semiconductor devices.
- High-performance electronics.
- Integrated circuits.
Problems Solved:
- Enhancing device performance.
- Improving efficiency.
- Increasing functionality.
Benefits:
- Improved semiconductor device performance.
- Enhanced efficiency.
- Increased functionality.
Commercial Applications:
- Semiconductor industry applications.
- Electronics manufacturing.
- Research and development in semiconductor technology.
Questions about Semiconductor Device:
1. How does the exclusion of the nucleation pattern in the upper gate contact impact the overall performance of the semiconductor device? 2. What are the potential implications of vertically stacked and spaced apart semiconductor patterns in terms of device efficiency and functionality?
Original Abstract Submitted
a semiconductor device may include a substrate including an active pattern, a channel pattern on the active pattern and including semiconductor patterns that are vertically stacked and spaced apart from each other, a source/drain pattern connected to the semiconductor patterns, a gate electrode on the semiconductor patterns and including inner electrodes between neighboring semiconductor patterns and an outer electrode on an uppermost semiconductor pattern, and a gate contact structure electrically connected to the outer electrode. the gate contact structure may include a lower gate contact on a top surface of the outer electrode and an upper gate contact on the lower gate contact. the lower gate contact may include a first liner pattern, a first filling pattern on the first liner pattern, and a nucleation pattern between the first liner pattern and the first filling pattern. the upper gate contact may not include the nucleation pattern.
