Samsung electronics co., ltd. (20240339377). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Junghwan Chun of Suwon-si (KR)
Deokyoung Jung of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339377 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes various layers and structures that enable its functionality.
- The device has an active region on a substrate, with a device isolation layer, source/drain region, interlayer insulating layer, stopper layer, contact structure, and conductive through-structure.
- The conductive through-structure passes through the device isolation layer and interlayer insulating layer to connect to the contact structure and stopper layer.
- The stopper layer is in contact with a side surface of the contact structure and is positioned lower than the contact structure relative to the substrate.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications.
Problems Solved: - The technology addresses the need for efficient electrical connections in semiconductor devices while maintaining proper isolation between components.
Benefits: - Improved performance and reliability of semiconductor devices. - Enhanced electrical connectivity and isolation within the device structure.
Commercial Applications: - The technology can be applied in the production of high-performance integrated circuits, microprocessors, and other electronic devices.
Questions about the technology: 1. How does the conductive through-structure improve the functionality of the semiconductor device? 2. What are the specific advantages of the stopper layer in the device structure?
Original Abstract Submitted
a semiconductor device includes an active region extending on a substrate in a first direction; a device isolation layer on the active region; a source/drain region on the active region; an interlayer insulating layer on the source/drain region; a stopper layer on the interlayer insulating layer; a contact structure passing through the interlayer insulating layer and the stopper layer and electrically connected to the source/drain region; and a conductive through-structure passing through the device isolation layer and the interlayer insulating layer from a lower surface of the substrate, and extending in a third direction, to contact a lower surface of the contact structure and the stopper layer, wherein the stopper layer is in contact with a portion of a side surface of the contact structure, and a lower surface of the stopper layer is lower than an upper surface of the contact structure relative to the substrate.
