Samsung electronics co., ltd. (20240334699). THREE-DIMENSIONAL MEMORY DEVICE simplified abstract
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THREE-DIMENSIONAL MEMORY DEVICE
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THREE-DIMENSIONAL MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240334699 titled 'THREE-DIMENSIONAL MEMORY DEVICE
The example memory device described in the abstract includes memory blocks with cell regions and cell wiring regions. One memory block contains a wordline pattern portion and a channel structure. The wordline pattern portion consists of wordlines stacked in a first direction and a channel structure extending in the same direction. Additionally, the wordline pattern portion has a staircase portion with descending and ascending staircases provided in different numbers within the memory block.
- Memory device with memory blocks containing wordline pattern portions and channel structures
- Wordline pattern portion includes wordlines stacked in a first direction
- Channel structure extends in the same direction as the wordlines
- Staircase portion within the wordline pattern portion with descending and ascending staircases
- Different numbers of descending and ascending staircases within the memory block
Potential Applications: - High-density memory storage devices - Advanced data processing systems - Next-generation computing technologies
Problems Solved: - Increased memory storage capacity - Enhanced data processing speed - Improved efficiency in computing systems
Benefits: - Higher performance in memory devices - Greater data storage capabilities - Enhanced overall system efficiency
Commercial Applications: Title: "Innovative Memory Device for Advanced Data Processing" This technology can be utilized in: - Consumer electronics - Cloud computing servers - Artificial intelligence systems
Questions about the technology: 1. How does the staircase portion within the wordline pattern portion contribute to the memory device's functionality?
- The staircase portion helps optimize the memory block's layout for efficient data storage and retrieval.
2. What advantages does the channel structure provide in the memory device?
- The channel structure enhances the flow of data within the memory block, improving overall performance.
Original Abstract Submitted
an example memory device includes a plurality of memory blocks, each including a cell region and a cell wiring region. at least one memory block includes a wordline pattern portion and a channel structure. the wordline pattern portion is provided in the cell region and the cell wiring region, and includes wordlines spaced apart from each other and stacked in a first direction. the channel structure is provided in the cell region to extend in the first direction. the wordline pattern portion extends a second direction, perpendicular to the first direction, when viewed from above, and has at least one staircase portion including a first staircase pattern, having sequentially descending staircases, and a second staircase pattern, having sequentially ascending staircases. the first staircase pattern and the second staircase pattern are provided in different numbers in the at least one memory block.
