Samsung electronics co., ltd. (20240334684). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Dongyoung Kim of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240334684 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract features an active pattern on a substrate surrounded by a device isolation pattern, a bit line extending on the active pattern, and a bit line contact with a metallic material.
- The device includes an active pattern on a substrate surrounded by a device isolation pattern.
- A bit line extends on the active pattern in a direction parallel to the substrate's bottom surface.
- The bit line contact is made with a metallic material.
- The width of the bit line contact is greater at a first level and in a direction intersecting the first direction.
- The first level is between the top surface of the device isolation pattern and the substrate.
Potential Applications: - Memory devices - Semiconductor manufacturing
Problems Solved: - Efficient data storage - Enhanced semiconductor performance
Benefits: - Improved memory device functionality - Increased data storage capacity
Commercial Applications: Title: Advanced Semiconductor Memory Devices for Enhanced Data Storage This technology can be used in various memory devices, leading to improved performance and increased data storage capacity. The market implications include the potential for more efficient and reliable semiconductor products.
Questions about Semiconductor Memory Devices: 1. How does the width of the bit line contact impact the performance of the memory device? The width of the bit line contact affects the efficiency of data transfer and storage within the semiconductor memory device. A wider contact may lead to improved conductivity and performance.
2. What role does the device isolation pattern play in the overall functionality of the semiconductor memory device? The device isolation pattern helps to separate different components within the semiconductor memory device, preventing interference and ensuring proper functionality.
Original Abstract Submitted
a semiconductor memory device includes an active pattern on a substrate and at least partially surrounded by a device isolation pattern, a bit line that extends on a center portion of the active pattern in a first direction that is parallel to a bottom surface of the substrate, and a bit line contact between the bit line and the active pattern. the bit line contact includes a metallic material. a width of the bit line contact at a first level and in a second direction is greater than a width of a bottom surface of the bit line contact in the second direction. the second direction intersects the first direction. the first level is between a top surface of the device isolation pattern and the substrate.
