Samsung electronics co., ltd. (20240334682). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Seok Han Park of Suwon-si (KR)
Hyun Geun Choi of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240334682 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract features a peri-gate structure, a first peri-connecting structure, a data storage pattern, an active pattern with specific surfaces and side walls, a bit line, a word line, a second peri-connecting structure, and a connecting pad.
- Peri-gate structure with improved integration and electrical characteristics
- Data storage pattern on the first peri-connecting structure
- Active pattern with specific surfaces and side walls
- Bit line connected to the active pattern
- Word line extending in a specific direction
- Second peri-connecting structure connected to the bit line
- Connecting pad linked to the second peri-connecting wiring
Potential Applications: - Memory devices - Integrated circuits - Semiconductor technology
Problems Solved: - Improved integration in semiconductor memory devices - Enhanced electrical characteristics - Efficient data storage and retrieval
Benefits: - Higher performance in memory devices - Increased data storage capacity - Enhanced reliability and durability
Commercial Applications: Title: Advanced Semiconductor Memory Devices for Enhanced Data Storage This technology can be utilized in various commercial applications such as consumer electronics, telecommunications, and computing industries. The improved integration and electrical characteristics offer a competitive edge in the market for memory devices.
Questions about the technology: 1. How does the active pattern contribute to the overall performance of the semiconductor memory device? 2. What sets this semiconductor memory device apart from existing technologies in the market?
Original Abstract Submitted
a semiconductor memory device with improved integration and electrical characteristics. the semiconductor memory device includes a peri-gate structure, a first peri-connecting structure on the peri-gate structure, a data storage pattern on the first peri-connecting structure, an active pattern that includes a first surface and a second surface opposite to each other in a first direction, and a first side wall and a second side wall opposite to each other in a second direction, the first surface of the active pattern connected to the data storage pattern and facing a substrate, a bit line on the active pattern, connected to the second surface of the active pattern, and extends in the second direction, a word line on the first side wall of the active pattern and extending in a third direction, a second peri-connecting structure connected to the bit line and a connecting pad connected to the second peri-connecting wiring.
