Samsung electronics co., ltd. (20240334678). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jong In Kang of Hwaseong-si (KR)
Sung-Jin Yeo of Yongin-si (KR)
Sang Yeon Han of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240334678 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a substrate with a cell region and a core region, a boundary element separation film within the substrate separating the cell and core regions, and a bit line extending along the cell region and the boundary element separation film.
- The boundary element separation film consists of a first region and a second region with different heights on the upper side.
- The bit line is placed over both the first and second regions of the boundary element separation film.
Potential Applications: - Memory devices - Integrated circuits - Semiconductor manufacturing
Problems Solved: - Efficient separation of cell and core regions in a semiconductor device - Improved performance and reliability of memory devices
Benefits: - Enhanced functionality of semiconductor devices - Increased efficiency in memory storage and retrieval
Commercial Applications: Title: Advanced Semiconductor Memory Devices This technology can be utilized in the production of high-performance memory devices for various electronic applications, leading to improved data storage and processing capabilities in consumer electronics, computers, and other devices.
Questions about the technology: 1. How does the height difference in the boundary element separation film impact the performance of the semiconductor device?
- The height difference helps in better separation of the cell and core regions, leading to improved functionality and reliability.
2. What are the key advantages of using a boundary element separation film in semiconductor devices?
- The boundary element separation film enhances the efficiency and performance of memory devices by effectively separating different regions within the substrate.
Original Abstract Submitted
a semiconductor device is provided. the semiconductor device includes a substrate which includes a cell region and a core region, a boundary element separation film which is placed inside the substrate, and separates the cell region and the core region, and a bit line which is placed on the cell region and the boundary element separation film and extends along a first direction, in which the boundary element separation film includes a first region and a second region, a height of an upper side of the first region of the boundary element separation film is different from a height of an upper side of the second region of the boundary element separation film, on a basis of a bottom side of the boundary element separation film, and the bit line is placed over the first region and the second region of the boundary element separation film.
