Samsung electronics co., ltd. (20240334677). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Moonyoung Jeong of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240334677 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract consists of various components such as bit lines, word lines, back gate electrode, active patterns, contact patterns, and gate insulating patterns.
- The device has a unique structure with a back gate electrode positioned between two word lines, and active patterns located on either side of the back gate electrode.
- Contact patterns are connected to the active patterns for data transmission.
- The gate insulating patterns, which contain a high-k dielectric material, separate the active patterns from the word lines.
- The top surface of the gate insulating pattern aligns with the top surfaces of the word lines, ensuring uniformity in the device's layout.
Potential Applications: This technology can be used in various semiconductor memory devices such as DRAMs, SRAMs, and flash memory.
Problems Solved: The design of this semiconductor memory device addresses issues related to data storage and retrieval efficiency in electronic devices.
Benefits: Improved data processing speed, enhanced memory capacity, and increased energy efficiency are some of the benefits of this technology.
Commercial Applications: This technology has significant commercial potential in the semiconductor industry for manufacturing advanced memory devices with higher performance capabilities.
Prior Art: Researchers can explore prior art related to semiconductor memory devices, gate insulating patterns, and high-k dielectric materials to understand the evolution of this technology.
Frequently Updated Research: Stay updated on the latest advancements in semiconductor memory technology, gate insulating materials, and memory device design for potential improvements in this field.
Questions about Semiconductor Memory Devices: 1. What are the key advantages of using high-k dielectric materials in semiconductor memory devices? 2. How does the placement of the back gate electrode impact the performance of the memory device?
Original Abstract Submitted
a semiconductor memory device includes a bit line, first and second word lines spaced apart from each other on the bit line, a back gate electrode between the first and second word lines, a first active pattern between the first word line and the back gate electrode, a second active pattern between the second word line and the back gate electrode, contact patterns connected to the first and second active patterns, respectively, and a first gate insulating pattern between the first active pattern and the first word line and between the second active pattern and the second word line. a top surface of the first gate insulating pattern is located at substantially a same height as top surfaces of the first and second word lines. the first gate insulating pattern includes a high-k dielectric material.
