Samsung electronics co., ltd. (20240332378). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Younggwon Kim of Suwon-si (KR)
Seung Geun Jung of Suwon-si (KR)
Myung Gil Kang of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240332378 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation:
This patent application describes a semiconductor device with various patterns and layers, including a substrate, lower pattern, channel pattern, source/drain pattern, gate structure, contact electrode, etch stop layer, and contact interface layer.
- The semiconductor device includes a substrate with multiple patterns and layers.
- It features a gate structure surrounding the channel pattern and source/drain patterns on both sides.
- The contact electrode is electrically connected to the source/drain pattern.
- An etch stop layer is positioned between the gate structure and the contact electrode.
- The contact interface layer includes two regions, one between the source/drain pattern and the contact electrode, and the other between the source/drain pattern and the etch stop layer.
Key Features and Innovation:
- Integration of multiple patterns and layers in a semiconductor device.
- Use of an etch stop layer to improve device performance.
- Design of a contact interface layer with distinct regions for enhanced functionality.
Potential Applications:
- Semiconductor manufacturing industry.
- Electronics and technology sector for various devices.
Problems Solved:
- Enhanced device performance.
- Improved electrical connectivity.
- Better control over semiconductor processes.
Benefits:
- Higher efficiency in semiconductor devices.
- Improved reliability and durability.
- Enhanced overall device performance.
Commercial Applications:
- Potential use in smartphones, computers, and other electronic devices.
- Semiconductor manufacturing companies can benefit from this technology.
Questions about Semiconductor Devices:
1. How does the etch stop layer contribute to the performance of the semiconductor device? 2. What are the specific advantages of the contact interface layer in this semiconductor device design?
Original Abstract Submitted
a semiconductor device may include a substrate, a lower pattern on the substrate, a channel pattern on the lower pattern, a source/drain pattern on both sides of the channel pattern, a gate structure surrounding the channel pattern, a contact electrode electrically connected to the source/drain pattern, an etch stop layer between the gate structure and the contact electrode, and a contact interface layer on the source/drain pattern. the contact interface layer may include a first region between the source/drain pattern and the contact electrode and a second region between the source/drain pattern and the etch stop layer.
