Samsung electronics co., ltd. (20240324239). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Questions about Semiconductor Memory Device
- 1.11 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Kyunghwan Lee of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324239 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The semiconductor memory device described in the patent application consists of memory cells with two vertical channel transistors connected in series, along with ferroelectric capacitors arranged in a vertical direction.
- The memory cells are organized in columns and rows in different horizontal directions.
- Each memory cell includes a first vertical channel transistor and a second vertical channel transistor connected in series.
- Multiple ferroelectric capacitors are connected to the second vertical channel transistor in parallel.
- The memory cells are arranged in a vertical direction.
Key Features and Innovation
- Memory cells with two vertical channel transistors connected in series.
- Ferroelectric capacitors arranged in a vertical direction.
- Organization of memory cells in columns and rows in different horizontal directions.
Potential Applications
The technology can be used in various memory storage applications, such as in computers, smartphones, and other electronic devices.
Problems Solved
The technology provides a more efficient and compact way to store data in semiconductor memory devices.
Benefits
- Higher storage capacity.
- Improved data access speed.
- Enhanced reliability of memory storage.
Commercial Applications
This technology can be applied in the development of faster and more reliable memory storage solutions for consumer electronics, data centers, and other computing devices.
Questions about Semiconductor Memory Device
How does the organization of memory cells in different horizontal directions improve the efficiency of data storage?
The organization of memory cells in different horizontal directions allows for a more compact and efficient layout, optimizing the use of space within the semiconductor memory device.
What are the advantages of using ferroelectric capacitors in memory cells?
Ferroelectric capacitors offer high storage density, fast read and write speeds, and low power consumption, making them ideal for use in memory storage applications.
Original Abstract Submitted
a semiconductor memory device includes a plurality of memory cells each including a first vertical channel transistor (vct) and a second vct arranged in a vertical direction and connected to each other in series, the plurality of memory cells respectively including a plurality of ferroelectric capacitors connected to the second vct in parallel and arranged in the vertical direction, wherein the plurality of memory cells are arranged in columns and rows in a first horizontal direction and a second horizontal direction that is different from the first horizontal direction.
