Samsung electronics co., ltd. (20240324219). INTEGRATED CIRCUIT DEVICES simplified abstract
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INTEGRATED CIRCUIT DEVICES
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INTEGRATED CIRCUIT DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324219 titled 'INTEGRATED CIRCUIT DEVICES
The abstract describes an integrated circuit device with a stack structure containing interlayer insulating layers and gate electrodes, as well as a channel structure within the stack.
- The gate electrodes consist of a first upper gate electrode at the highest position and a second upper gate electrode at the second-highest position.
- The interlayer insulating layers include a first layer between the first and second upper gate electrodes with a specific thickness, and a second layer with a different thickness.
- The distance between the lower surface of the first upper gate electrode and the substrate is greater than or equal to the distance between the lower surface of the pad structure and the substrate.
- The upper surface of the second upper gate electrode is closer to or at an equal distance from the lower surface of the pad structure compared to the substrate.
Potential Applications: - This technology can be used in the manufacturing of advanced integrated circuits for various electronic devices. - It can improve the performance and efficiency of semiconductor devices.
Problems Solved: - Enhances the functionality and reliability of integrated circuits. - Optimizes the layout and design of semiconductor components.
Benefits: - Increased performance and efficiency of electronic devices. - Enhanced reliability and durability of integrated circuits.
Commercial Applications: - This technology can be applied in the production of smartphones, computers, and other consumer electronics. - It has potential uses in the automotive industry for advanced driver assistance systems and vehicle control units.
Questions about the technology: 1. How does the distance between the gate electrodes and the substrate impact the performance of the integrated circuit? 2. What are the specific advantages of having multiple interlayer insulating layers in the stack structure?
Original Abstract Submitted
an integrated circuit device comprising: a substrate; a stack structure comprising interlayer insulating layers and gate electrodes; and a channel structure in the stack structure, wherein the gate electrodes comprise a first upper gate electrode at a highest position and a second upper gate electrode at a second-highest position, the interlayer insulating layers comprises a first interlayer insulating layer between the first upper gate electrode and the second upper gate electrode with a first thickness, a second interlayer insulating layer that has a second thickness, a lower surface of the first upper gate electrode is at a farther distance than or at an equal distance to a lower surface of the pad structure from the substrate, and an upper surface of the second upper gate electrode is at a closer distance than or at an equal distance to the lower surface of the pad structure from the substrate.
