Samsung electronics co., ltd. (20240324201). SEMICONDUCTOR MEMORY DEVICE simplified abstract
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SEMICONDUCTOR MEMORY DEVICE
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Inventor(s)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324201 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract includes a substrate, gate stack structures with multiple gate lines and insulating films, first separation insulating films, a contact hole defined by the gate stack structures and first separation insulating films, a contact electrode within the contact hole, and second separation insulating films on the uppermost gate line separating the contact electrode from the gate lines.
- The device features gate stack structures with multiple gate lines and insulating films.
- First separation insulating films are alternately stacked with the gate lines to define a contact hole.
- A contact electrode within the contact hole connects to the gate stack structures.
- Second separation insulating films on the uppermost gate line separate the contact electrode from the gate lines.
Potential Applications: - Memory devices - Integrated circuits - Semiconductor technology
Problems Solved: - Efficient memory storage - Improved circuit performance - Enhanced semiconductor device functionality
Benefits: - Increased data storage capacity - Enhanced circuit reliability - Improved overall performance
Commercial Applications: Title: Advanced Semiconductor Memory Devices for High-Performance Electronics This technology can be applied in various industries such as consumer electronics, telecommunications, and computing, where high-performance memory devices are essential for efficient operations and data processing.
Questions about Semiconductor Memory Devices: 1. How does the design of gate stack structures impact the performance of semiconductor memory devices?
- The design of gate stack structures plays a crucial role in determining the efficiency and functionality of semiconductor memory devices by influencing factors such as data storage capacity and circuit performance.
2. What are the potential advancements in semiconductor memory devices that could further enhance their capabilities?
- Potential advancements in semiconductor memory devices may include increased data storage density, faster data access speeds, and improved energy efficiency through innovative materials and design optimizations.
Original Abstract Submitted
a semiconductor memory device includes a substrate, a plurality of gate stack structures on the substrate that include a plurality of gate lines stacked and a plurality of insulating films between the plurality of gate lines, a plurality of first separation insulating films that are alternately stacked with the plurality of gate lines, where the plurality of gate stack structures and the plurality of first separation insulating films define a contact hole, a contact electrode that is in the contact hole and contacts the plurality of gate stack structures, and one or more second separation insulating film that is on an uppermost gate line of one or more of the plurality of gate stack structures and separates the contact electrode from the uppermost gate line.
