Samsung electronics co., ltd. (20240324186). SEMICONDUCTOR DEVICES simplified abstract
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324186 titled 'SEMICONDUCTOR DEVICES
The semiconductor device described in the abstract includes active patterns on a substrate, gate structures in recesses of the active patterns, first contact plugs electrically connected to opposite edge portions of each of the active patterns, first insulation spacers surrounding sidewalls of the first contact plugs, a bit line structure filling an opening between the first insulation spacers, and a capacitor electrically connected to each of the first contact plugs.
- Active patterns on a substrate
- Gate structures in recesses of the active patterns
- First contact plugs connected to edge portions of the active patterns
- First insulation spacers surrounding the first contact plugs
- Bit line structure filling an opening between the insulation spacers
- Capacitor connected to each of the first contact plugs
Potential Applications: - Semiconductor manufacturing - Memory devices - Integrated circuits
Problems Solved: - Efficient electrical connections in semiconductor devices - Improved performance and reliability of memory devices
Benefits: - Enhanced electrical connectivity - Increased performance and reliability of semiconductor devices
Commercial Applications: Title: Advanced Semiconductor Devices for Memory Applications This technology can be used in the production of memory devices, leading to faster and more reliable electronic products. The market implications include improved data storage capabilities and enhanced performance in various electronic devices.
Questions about the technology: 1. How does this semiconductor device improve memory device performance? 2. What are the key advantages of using first contact plugs in semiconductor manufacturing?
Frequently Updated Research: Ongoing research in semiconductor manufacturing techniques and materials could further enhance the performance and efficiency of devices like the one described in the patent application. Stay updated on the latest advancements in the field for potential future improvements.
Original Abstract Submitted
a semiconductor device includes active patterns on a substrate, gate structures in recesses of the active patterns and extending in the first direction, first contact plugs electrically connected to opposite edge portions of each of the active patterns, respectively, the first contact plugs being spaced apart from each other in each of the first and second directions and aligned in each of the first and second directions, first insulation spacers surrounding sidewalls of the first contact plugs, the first insulation spacers filling spaces between the first contact plugs in the second direction, a bit line structure filling an opening extending in the second direction between the first insulation spacers, the bit line structure contacting central portions of the active patterns, and a capacitor electrically connected to each of the first contact plugs.
