Samsung electronics co., ltd. (20240324183). INTEGRATED CIRCUIT DEVICE simplified abstract
Contents
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Chanhoon Park of Suwon-si (KR)
Seunghoon Kim of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324183 titled 'INTEGRATED CIRCUIT DEVICE
The abstract describes an integrated circuit device with various components such as bit line structures, insulating spacers, buried contacts, insulation capping patterns, and landing pads.
- The device includes a substrate with an active area and multiple bit line structures with insulating spacers.
- A buried contact connects the bit line structures to the active area.
- An insulation capping pattern is present on one of the bit line structures.
- A landing pad is electrically connected to the buried contact and overlaps the bit line structure and insulation capping pattern.
- The uppermost surface of the landing pad is higher than the uppermost surface of the insulation capping pattern relative to the substrate.
Potential Applications: - Memory devices - Semiconductor manufacturing - Integrated circuit design
Problems Solved: - Efficient electrical connections in integrated circuits - Improved performance and reliability of memory devices
Benefits: - Enhanced electrical connectivity - Increased efficiency in data storage - Improved overall device performance
Commercial Applications: Title: "Advanced Integrated Circuit Devices for Memory Applications" This technology can be utilized in the production of various memory devices, leading to faster and more reliable data storage solutions. The market implications include advancements in semiconductor technology and increased demand for high-performance memory products.
Prior Art: Researchers can explore prior patents related to integrated circuit devices, memory technologies, and semiconductor manufacturing processes to gain a deeper understanding of the existing knowledge in this field.
Frequently Updated Research: Researchers and industry professionals can stay updated on the latest advancements in integrated circuit design, memory technologies, and semiconductor manufacturing processes to enhance their knowledge and potentially discover new applications for this technology.
Questions about Integrated Circuit Devices: 1. How does the design of the landing pad contribute to the overall performance of the integrated circuit device? 2. What are the key considerations in manufacturing processes when implementing insulating spacers in bit line structures?
Original Abstract Submitted
an integrated circuit device includes a substrate having an active area, a plurality of bit line structures on the substrate, the plurality of bit line structures including insulating spacers on sidewalls thereof, a buried contact between the plurality of bit line structures and electrically connected to the active area, an insulation capping pattern on a bit line structure of the plurality of bit line structures, and a landing pad electrically connected to the buried contact, the landing pad arranged to vertically overlap the bit line structure on the insulation capping pattern, wherein an uppermost surface of the landing pad is higher than an uppermost surface of the insulation capping pattern, relative to the substrate.
