Samsung electronics co., ltd. (20240324182). SEMICONDUCTOR MEMORY DEVICES simplified abstract
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SEMICONDUCTOR MEMORY DEVICES
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SEMICONDUCTOR MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324182 titled 'SEMICONDUCTOR MEMORY DEVICES
The semiconductor device described in the abstract includes various structures such as an active pattern, a bit line structure, a storage node contact, a spacer structure, an insulating pattern, and a landing pad structure.
- The semiconductor device features a storage node contact that is electrically connected to the active pattern next to the bit line structure.
- A spacer structure is positioned between the side surface of the bit line structure and the storage node contact.
- The upper surface of the spacer structure is at a vertical level lower than the upper surface of the bit line structure.
- An insulating pattern is located on the spacer structure.
- The landing pad structure is electrically connected to the storage node contact and is positioned on the spacer structure and the bit line structure.
- The landing pad structure includes three side surfaces: one in contact with the spacer structure, one in contact with the bit line structure, and one in contact with the insulating pattern.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications. - It can enhance the performance and efficiency of memory storage systems in electronic devices.
Problems Solved: - Provides a more efficient and reliable way to connect storage nodes in semiconductor devices. - Helps in improving the overall functionality and performance of electronic devices.
Benefits: - Enhanced connectivity and electrical performance in semiconductor devices. - Improved reliability and efficiency in memory storage systems. - Potential for advancements in electronic device technology.
Commercial Applications: - This technology can be utilized in the production of memory storage components for consumer electronics, data centers, and other electronic devices. - It has the potential to drive innovation in the semiconductor industry and improve the performance of electronic devices.
Questions about the Technology: 1. How does the spacer structure contribute to the overall functionality of the semiconductor device? 2. What are the potential implications of the landing pad structure in enhancing the performance of electronic devices?
Frequently Updated Research: - Stay updated on the latest advancements in semiconductor technology and memory storage systems to understand the evolving landscape of this industry.
Original Abstract Submitted
a semiconductor device includes a substrate that includes an active pattern, a bit line structure that crosses the active pattern, a storage node contact electrically connected to the active pattern next to the bit line structure, a spacer structure between a side surface of the bit line structure and the storage node contact, an upper surface of the spacer structure is at a vertical level lower than an upper surface of the bit line structure, an insulating pattern on the spacer structure, and a landing pad structure electrically connected to the storage node contact and on the spacer structure and the bit line structure. the landing pad structure include a first side surface in contact with the spacer structure, a second side surface in contact with the bit line structure, and a third side surface in contact with the insulating pattern.
