Samsung electronics co., ltd. (20240324181). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
Contents
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
Inventor(s)
Myeong-Dong Lee of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324181 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
The abstract describes a method of manufacturing a semiconductor device that involves forming a buffer layer on a substrate with active regions and word lines. This is followed by stacking a first conductive layer and a first insulating layer, forming bit line structures that are in contact with the active regions through first contacts, and then adding first spacers and expanding the bit line structures.
- Sequentially stacking a first conductive layer and a first insulating layer
- Forming bit line structures in contact with active regions through first contacts
- Adding first spacers and expanding the bit line structures
- Forming second contacts in contact with active regions
- Connecting bit line structure expansions to main parts
Potential Applications: - Semiconductor manufacturing - Memory devices - Integrated circuits
Problems Solved: - Efficient and precise formation of bit line structures - Improved connectivity with active regions
Benefits: - Enhanced performance of semiconductor devices - Increased reliability and durability - Cost-effective manufacturing process
Commercial Applications: Title: Semiconductor Device Manufacturing Method for Improved Performance This technology can be applied in the production of memory devices, integrated circuits, and other semiconductor components, leading to enhanced performance and reliability in electronic devices. The method offers a cost-effective solution for manufacturing advanced semiconductor devices.
Questions about Semiconductor Device Manufacturing Method: 1. How does this method improve the performance of semiconductor devices? 2. What are the key advantages of using this manufacturing process for memory devices?
Original Abstract Submitted
a method of manufacturing a semiconductor device includes forming a buffer layer on a substrate including active regions and word lines, sequentially stacking a first conductive layer and a first insulating layer, forming bit line structure main parts such that each bit line main part is in contact with one or more of the active regions through a plurality of first contacts, by etching the first insulating layer and the first conductive layer, stacking first spacers, forming bit line structure expansions by etching the first spacers, the first insulating layer, and the first conductive layer, and forming second contacts such that the second contacts are in contact with the active regions, respectively. the bit line structure expansions are connected to the bit line structure main parts, respectively, and are wider than the bit line structure main parts as viewed in a plan view.
