Samsung electronics co., ltd. (20240324165). SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME
Organization Name
Inventor(s)
Yoonyoung Jung of Suwon-si (KR)
Sooyeon Hong of Yongin-si (KR)
SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324165 titled 'SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME
The semiconductor memory device described in the abstract includes an active pattern on a substrate, with a source/drain pattern in the upper portion, a gate electrode extended in a first direction, and a shared contact connecting the source/drain pattern and the gate electrode.
- The active pattern on the substrate includes a source/drain pattern and a gate electrode.
- The gate electrode and the source/drain pattern are adjacent to each other in a direction that crosses the first direction.
- The shared contact electrically connects the source/drain pattern and the gate electrode.
- The shared contact includes active and gate contacts, each connected to the respective source/drain pattern and gate electrode.
- The gate contact has a body portion coupled to the gate electrode and a protruding portion that extends into the active contact.
Potential Applications: - Memory devices - Integrated circuits - Semiconductor manufacturing
Problems Solved: - Efficient electrical connection between source/drain pattern and gate electrode - Space-saving design in semiconductor memory devices
Benefits: - Improved performance in memory devices - Enhanced reliability in integrated circuits - Cost-effective manufacturing process
Commercial Applications: Title: Semiconductor Memory Device with Shared Contact This technology can be used in various memory devices, integrated circuits, and semiconductor products, leading to advancements in the electronics industry. The market implications include increased efficiency, reliability, and cost savings for manufacturers.
Questions about Semiconductor Memory Device with Shared Contact: 1. How does the shared contact improve the performance of semiconductor memory devices? 2. What are the potential cost savings for manufacturers using this technology?
Frequently Updated Research: Stay updated on the latest advancements in semiconductor memory devices and integrated circuits to ensure optimal performance and reliability in electronic devices.
Original Abstract Submitted
a semiconductor memory device includes an active pattern on a substrate, the active pattern including a source/drain pattern in an upper portion thereof, a gate electrode on the active pattern and extended in a first direction, the gate electrode and the source/drain pattern adjacent to each other in a second direction that crosses the first direction, and a shared contact coupled to the source/drain pattern and the gate electrode to electrically connect the source/drain pattern and the gate electrode. the shared contact includes active and gate contacts, which are electrically connected to the source/drain pattern and the gate electrode, respectively. the gate contact includes a body portion coupled to the gate electrode and a protruding portion, which protrudes from the body portion in the second direction and extends into and buried in the active contact.
