Samsung electronics co., ltd. (20240324164). INTEGRATED CIRCUIT simplified abstract
Contents
INTEGRATED CIRCUIT
Organization Name
Inventor(s)
INTEGRATED CIRCUIT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324164 titled 'INTEGRATED CIRCUIT
Simplified Explanation: The patent application describes a 3-dimensional stack structure that reduces the size of an SRAM device by minimizing the planar area occupied by unit cells and simplifying the wiring connection structure between transistors.
- **Key Features and Innovation:**
- Utilizes a 3-dimensional stack structure to minimize planar area. - Simplifies wiring connection structure between transistors. - Improves reliability and reduces the size of the integrated circuit.
- **Potential Applications:**
- Semiconductor industry for memory devices. - Electronics manufacturing for compact and reliable circuits.
- **Problems Solved:**
- Reducing the size of integrated circuits. - Simplifying wiring connections between transistors. - Improving reliability of SRAM devices.
- **Benefits:**
- Reduced size of integrated circuits. - Improved reliability of SRAM devices. - Simplified wiring connections for easier manufacturing.
- **Commercial Applications:**
- Memory chip manufacturers can use this technology to create smaller and more reliable SRAM devices, potentially leading to more compact electronic devices in the market.
- **Prior Art:**
- Readers can start searching for prior art related to 3-dimensional stack structures in the semiconductor industry and innovations in wiring connection structures for transistors.
- **Frequently Updated Research:**
- Stay updated on advancements in 3-dimensional stack structures and wiring connection technologies in the semiconductor industry for potential improvements in integrated circuits.
Questions about 3-Dimensional Stack Structure Technology:
1. What are the potential challenges in implementing a 3-dimensional stack structure in integrated circuits?
- Implementing a 3-dimensional stack structure may pose challenges in terms of heat dissipation, interconnectivity, and manufacturing complexity.
2. How does the 3-dimensional stack structure technology compare to traditional planar layouts in terms of performance and reliability?
- The 3-dimensional stack structure technology offers improved performance and reliability by reducing the planar area occupied by unit cells and simplifying wiring connections between transistors.
Original Abstract Submitted
according to the inventive concept, based on the layout of a 3-dimensional stack structure enabling minimization of the planar area occupied by unit cells and simplification of the configuration of a wiring connection structure between transistors defining at least a portion of an sram device, an integrated circuit with a reduced size and improved reliability may be implemented.
