Samsung electronics co., ltd. (20240322043). INTEGRATED CIRCUIT DEVICE simplified abstract
Contents
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
WOOYEOL Maeng of SUWON-SI (KR)
CHANGKI Baek of POHANG-SI (KR)
KANGWOOK Park of SUWON-SI (KR)
HYANGWOO Kim of POHANG-SI (KR)
KYOUNGHWAN Oh of POHANG-SI (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240322043 titled 'INTEGRATED CIRCUIT DEVICE
The integrated circuit device described in the abstract includes a fin body, a source, a drain, a channel, a drain extension region, a gate insulating film, a high-permittivity layer, and a double gate.
- The fin body houses the source and drain, with a channel in between.
- The drain extension region is located between the drain and the channel.
- A gate insulating film covers the channel and the drain extension region.
- A high-permittivity layer is placed on the gate insulating film over the drain extension region.
- The double gate consists of a first gate above the channel near the source and a second gate in contact with the first gate.
Potential Applications: - This technology can be used in advanced semiconductor devices for improved performance. - It can enhance the efficiency and speed of electronic circuits in various applications.
Problems Solved: - Enhances the overall performance and efficiency of integrated circuits. - Provides better control over the flow of current in semiconductor devices.
Benefits: - Improved functionality and performance of electronic devices. - Enhanced speed and efficiency in data processing applications.
Commercial Applications: - This technology can be utilized in the development of high-performance computing systems. - It can be integrated into mobile devices, IoT devices, and other electronics for enhanced functionality.
Questions about the technology: 1. How does the high-permittivity layer contribute to the performance of the integrated circuit device? 2. What are the specific advantages of having a double gate configuration in this technology?
Frequently Updated Research: - Stay updated on advancements in semiconductor technology and materials science for potential improvements in this integrated circuit device.
Original Abstract Submitted
an integrated circuit device includes a fin body, a source and a drain disposed on the fin body, a channel disposed in the fin body between the source and the drain, a drain extension region disposed in the fin body between the drain and the channel, a gate insulating film disposed on the channel and the drain extension region, a high-permittivity layer disposed on the gate insulating film over the drain extension region, and a double gate including a first gate disposed on the gate insulating film above the channel adjacent to the source and a second gate in contact with the first gate. a first work function of the first gate is greater than a second work function of the second gate.
