Samsung electronics co., ltd. (20240322039). INTEGRATED CIRCUIT DEVICES simplified abstract
Contents
INTEGRATED CIRCUIT DEVICES
Organization Name
Inventor(s)
INTEGRATED CIRCUIT DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240322039 titled 'INTEGRATED CIRCUIT DEVICES
The integrated circuit device described in the abstract consists of a fin-type active region, a channel region, a gate line, and a source/drain region with multiple semiconductor layers.
- The device features a fin-type active region extending in one direction.
- A channel region is located on the fin-type active region.
- A gate line extends in a different direction on the channel region.
- The source/drain region includes several semiconductor layers, with varying germanium content ratios.
- The germanium content ratio in the first semiconductor layer is between 10% and less than 100% and decreases towards the boundary with the second semiconductor layer.
Potential Applications: - This technology can be applied in the semiconductor industry for advanced integrated circuit designs. - It can enhance the performance and efficiency of electronic devices.
Problems Solved: - Improved conductivity and performance in integrated circuits. - Enhanced functionality and miniaturization of electronic devices.
Benefits: - Higher efficiency and speed in electronic devices. - Better integration of components in compact designs.
Commercial Applications: Title: Advanced Semiconductor Technology for Integrated Circuits This technology can revolutionize the semiconductor industry by enabling faster and more efficient integrated circuits. It has the potential to be used in various electronic devices, from smartphones to computers, enhancing their performance and functionality.
Questions about the technology: 1. How does the germanium content ratio affect the performance of the semiconductor layers in the source/drain region? 2. What are the specific advantages of using a fin-type active region in integrated circuit design?
Original Abstract Submitted
the integrated circuit device includes a fin-type active region extending in a first direction, a channel region on the fin-type active region, a gate line on the channel region and extending in a second direction, and a source/drain region on the fin-type active region and in contact with the channel region, wherein the source/drain region includes a plurality of semiconductor layers including a first semiconductor layer that includes a portion in contact with the channel region and a portion in contact with the fin-type active region, a second semiconductor layer on the first semiconductor layer, and a third semiconductor layer on the second semiconductor layer, a germanium (ge) content ratio in the first semiconductor layer is greater than or equal to 10 at % and less than 100 at %, and the ge content ratio in the first semiconductor layer decreases towards a boundary with the second semiconductor layer.
