Samsung electronics co., ltd. (20240321992). INTEGRATED CIRCUIT DEVICE simplified abstract
Contents
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Seungpyo Hong of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321992 titled 'INTEGRATED CIRCUIT DEVICE
The patent application describes an integrated circuit device with fin-type active regions, gate lines, nanosheet stacks, gate cut insulating portions, and corner insulating spacers.
- Fin-type active regions extend in a first lateral direction on a substrate.
- Device isolation film covers the sidewalls of the fin-type active regions.
- Gate lines are located on the fin-type active regions and the device isolation film.
- Nanosheet stacks are present on the fin top surface of each fin-type active region.
- Gate cut insulating portions are on the device isolation film, facing the end sidewall of the gate line.
- Corner insulating spacers are positioned between the nanosheet stacks and the gate cut insulating portions.
Potential Applications: - This technology can be used in advanced semiconductor devices for improved performance and efficiency. - It can be applied in the development of next-generation integrated circuits for various electronic devices.
Problems Solved: - Enhances the performance and functionality of integrated circuit devices. - Improves the scalability and power efficiency of semiconductor components.
Benefits: - Increased speed and efficiency of electronic devices. - Enhanced reliability and durability of integrated circuits. - Enables the development of more compact and powerful electronic devices.
Commercial Applications: Title: Advanced Semiconductor Technology for Enhanced Device Performance This technology has potential commercial applications in the semiconductor industry for the production of high-performance electronic devices. It can be utilized in the manufacturing of smartphones, tablets, computers, and other consumer electronics, as well as in industrial applications such as data centers and automotive electronics.
Questions about the Technology: 1. How does the integration of nanosheet stacks improve the performance of integrated circuit devices? 2. What are the key advantages of using corner insulating spacers in semiconductor technology?
Original Abstract Submitted
an integrated circuit device includes fin-type active regions extending in a first lateral direction on a substrate, a device isolation film covering sidewalls of the fin-type active regions, a gate line on the fin-type active regions and the device isolation film, nanosheet stacks on a fin top surface of each of the fin-type active regions, each nanosheet stack including at least one nanosheet and being surrounded by the gate line, a gate cut insulating portion on the device isolation film and facing an end sidewall of the gate line in a second lateral direction, and a corner insulating spacer between a first nanosheet stack of the nanosheet stacks and the gate cut insulating portion and between the device isolation film and the gate line, the first nanosheet stack being closest to the gate cut insulating portion in the second lateral direction.
