Samsung electronics co., ltd. (20240321991). INTEGRATED CIRCUIT DEVICE simplified abstract
Contents
- 1 INTEGRATED CIRCUIT DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Questions about Nanosheet Technology
- 1.11 Original Abstract Submitted
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321991 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The patent application describes an integrated circuit device with a unique nanosheet structure on a fin-type active region, surrounded by a gate line and connected to a source/drain region.
- The device includes a fin-type active region on a substrate.
- A nanosheet is positioned on the fin top surface of the active region, separated vertically from the fin top surface.
- A gate line surrounds the nanosheet on the active region.
- A source/drain region on the active region is in contact with the nanosheet.
- The nanosheet consists of a multilayered sheet with outer semiconductor sheets and a core semiconductor sheet stacked vertically.
Key Features and Innovation
- Nanosheet structure on a fin-type active region.
- Multilayered sheet composition of the nanosheet.
- Vertical separation of the nanosheet from the fin top surface.
- Integration with gate line and source/drain region.
Potential Applications
This technology could be applied in the development of advanced integrated circuit devices for various electronic applications, such as smartphones, computers, and other electronic devices requiring high-performance processors.
Problems Solved
- Enhanced performance and efficiency of integrated circuit devices.
- Improved control and functionality of semiconductor components.
- Potential for miniaturization and increased density of electronic components.
Benefits
- Increased speed and efficiency of electronic devices.
- Enhanced functionality and control of semiconductor components.
- Potential for smaller, more powerful electronic devices.
Commercial Applications
Advanced integrated circuit devices incorporating this technology could have significant commercial applications in the consumer electronics industry, telecommunications sector, and other high-tech industries requiring cutting-edge semiconductor technology.
Questions about Nanosheet Technology
What are the potential drawbacks of using nanosheets in integrated circuit devices?
Nanosheets offer numerous benefits, but potential drawbacks could include manufacturing challenges and increased complexity in device design.
How does the multilayered composition of the nanosheet contribute to the performance of the integrated circuit device?
The multilayered structure of the nanosheet allows for enhanced control of the device's electrical properties and performance characteristics.
Original Abstract Submitted
an integrated circuit device includes a fin-type active region on a substrate, a nanosheet on a fin top surface of the fin-type active region, the nanosheet being apart from the fin top surface of the fin-type active region in a vertical direction, a gate line surrounding the nanosheet on the fin-type active region, and a source/drain region on the fin-type active region, the source/drain region being in contact with the nanosheet, wherein the nanosheet includes a multilayered sheet comprising a first outer semiconductor sheet, a core semiconductor sheet, and a second outer semiconductor sheet, which are sequentially stacked in the vertical direction.
