Samsung electronics co., ltd. (20240321983). INTEGRATED CIRCUIT DEVICES simplified abstract
Contents
INTEGRATED CIRCUIT DEVICES
Organization Name
Inventor(s)
Jongryeol Yoo of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321983 titled 'INTEGRATED CIRCUIT DEVICES
The abstract describes an integrated circuit device with a fin-type active region protruding from a substrate, semiconductor patterns on the fin-type active region, a gate line surrounding the semiconductor patterns, and a source/drain region adjacent to the gate line.
- The device features a fin-type active region that extends in a first direction.
- Semiconductor patterns are separated from each other in a vertical direction.
- The gate line surrounds the semiconductor patterns and extends in a second direction intersecting the first direction.
- The source/drain region includes a first semiconductor layer with a semiconductor material containing a first element such as fluorine, oxygen, argon, or nitrogen.
- An inner spacer between the source/drain region and the gate line includes an oxide or nitride with the first element.
Potential Applications: - This technology can be used in the manufacturing of advanced integrated circuits for various electronic devices. - It can enhance the performance and efficiency of semiconductor devices in applications such as smartphones, computers, and IoT devices.
Problems Solved: - Improved integration and performance of semiconductor devices. - Enhanced functionality and reliability of integrated circuits.
Benefits: - Higher efficiency and performance of electronic devices. - Increased reliability and durability of integrated circuits. - Potential cost savings in semiconductor manufacturing processes.
Commercial Applications: Title: Advanced Integrated Circuit Technology for Enhanced Device Performance This technology can be utilized in the production of high-performance electronic devices, leading to improved functionality and reliability. The market implications include increased demand for advanced semiconductor components in various industries such as telecommunications, consumer electronics, and automotive.
Questions about the technology: 1. How does the inclusion of elements like fluorine, oxygen, argon, or nitrogen in the semiconductor material benefit the performance of the integrated circuit device? 2. What are the specific advantages of using a fin-type active region in the design of integrated circuits?
Original Abstract Submitted
an integrated circuit device may include a fin-type active region that protrudes from a substrate and extends in a first direction, a plurality of semiconductor patterns on the fin-type active region and separated from each other in a vertical direction, a gate line on the fin-type active region, the gate line surrounding the semiconductor patterns and extending in a second direction that intersects the first direction, a source/drain region on the fin-type active region, adjacent to the gate line and connected to the semiconductor patterns, wherein the source/drain region includes a first semiconductor layer contacting the semiconductor patterns and including a semiconductor material including a first element including at least one selected from the group consisting of fluorine, oxygen, argon, and nitrogen, and an inner spacer between the source/drain region and the gate line and including an oxide including the first element or a nitride including the first element.
