Samsung electronics co., ltd. (20240321979). INTEGRATED CIRCUIT DEVICE simplified abstract
Contents
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Hyunseung Song of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321979 titled 'INTEGRATED CIRCUIT DEVICE
The abstract describes an integrated circuit device with specific features and components.
- The device includes a substrate with first and second device regions.
- It has fin-type active regions extending in a first direction in both device regions.
- A gate line crosses the first direction in the fin-type active regions.
- Source/drain regions are adjacent to the gate line in the fin-type active regions.
- Source/drain contacts are connected to the source/drain regions.
- The first source/drain contact includes a short metal plug and a conductive barrier layer.
Potential Applications: - This technology can be used in the semiconductor industry for advanced integrated circuits. - It may find applications in electronic devices requiring high performance and efficiency.
Problems Solved: - Enhances the performance and functionality of integrated circuit devices. - Provides a more efficient and reliable connection between source/drain regions and contacts.
Benefits: - Improved overall performance of integrated circuits. - Enhanced reliability and durability of electronic devices. - Enables the development of more advanced and efficient technologies.
Commercial Applications: Title: Advanced Integrated Circuit Technology for Enhanced Performance This technology can be utilized in the production of high-performance electronic devices such as smartphones, computers, and IoT devices. It can also benefit industries that rely on advanced semiconductor technology for their products.
Questions about Integrated Circuit Device Technology: 1. How does the integration of fin-type active regions improve the performance of the device? - The integration of fin-type active regions allows for better control of the flow of current in the device, leading to improved efficiency and performance.
2. What role does the conductive barrier layer play in the first source/drain contact? - The conductive barrier layer helps to enhance the electrical connection and prevent unwanted interference in the source/drain contact.
Original Abstract Submitted
an integrated circuit device includes: a substrate including a first and second device regions; a first and third fin-type active regions extending in a first direction in the first device region; a second and fourth fin-type active regions extending in the first direction in the second device region; a gate line extending in a second direction crossing the first direction in the first through fourth fin-type active regions; a first source/drain region adjacent to the gate line in the first fin-type active region; a second source/drain region adjacent to the gate line in the second fin-type active region; a first source/drain contact connected to the first source/drain region; and a second source/drain contact connected to the second source/drain region; wherein the first source/drain contact includes a first short metal plug and a first conductive barrier layer at least partially surrounding a portion of sidewalls of the first short metal plug.
