Samsung electronics co., ltd. (20240321976). INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
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INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
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INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321976 titled 'INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
The abstract describes an integrated circuit device with active regions, bit lines, direct contacts, nitride and oxide films, and isolation films.
- The device includes a substrate with active regions, a bit line, and direct contacts.
- An inner nitride film connects the sidewalls of the direct contacts.
- An isolation film separates the active regions.
- An outer oxide film is connected to the second active region.
Potential Applications: - This technology can be used in memory devices, processors, and other electronic devices. - It can improve the performance and efficiency of integrated circuits.
Problems Solved: - Enhances the connectivity and functionality of integrated circuits. - Improves the reliability and durability of electronic devices.
Benefits: - Increased speed and efficiency of data processing. - Enhanced reliability and longevity of electronic devices.
Commercial Applications: - Memory chips, microprocessors, and other semiconductor devices can benefit from this technology. - The market for integrated circuits and electronic components may see advancements with the implementation of this innovation.
Prior Art: - Researchers can explore prior patents related to integrated circuit design, semiconductor materials, and device fabrication processes.
Frequently Updated Research: - Stay informed about the latest advancements in semiconductor technology, integrated circuit design, and electronic device manufacturing processes.
Questions about the Technology: 1. How does this technology improve the performance of electronic devices? 2. What are the potential applications of this integrated circuit device in the semiconductor industry?
Original Abstract Submitted
an integrated circuit device includes a substrate including a plurality of active regions that include a first active region and a second active region that is adjacent to the first active region, a bit line that extends on the substrate in a horizontal direction, a first direct contact connected to the first active region, a second direct contact between the first direct contact and the bit line, an inner nitride film connected to a sidewall of the first direct contact and a sidewall of the second direct contact, an isolation film between the first active region and the second active region, and an outer oxide film that is connected to at least one surface of the second active region and between the inner nitride film and the second active region.
