Samsung electronics co., ltd. (20240321961). INTEGRATED CIRCUIT DEVICE simplified abstract
Contents
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Myunggil Kang of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321961 titled 'INTEGRATED CIRCUIT DEVICE
The abstract describes an integrated circuit device with a first nano-sheet stack on a fin-type active region, a gate line in a second horizontal direction, a vertical structure contacting the nano-sheets, and a first gate dielectric layer between the gate line and the nano-sheets.
- The device includes a gate line with a first sub-gate portion under each nano-sheet.
- The first gate dielectric layer has a first portion between the gate line and the nano-sheets, and a second portion between the sub-gate portion and the vertical structure.
- The thickness of the second portion in the second horizontal direction is greater than the thickness of the first portion in the vertical direction.
Potential Applications: - Advanced semiconductor technology - High-performance computing - Nanoelectronics research
Problems Solved: - Enhanced performance and efficiency in integrated circuits - Improved gate dielectric layer design - Increased scalability and functionality in semiconductor devices
Benefits: - Higher speed and lower power consumption - Enhanced reliability and durability - Potential for smaller and more powerful electronic devices
Commercial Applications: Title: Advanced Semiconductor Technology for Next-Generation Devices This technology can be applied in the development of cutting-edge electronic devices, such as smartphones, tablets, and computers, to improve performance and energy efficiency in a competitive market.
Questions about the technology: 1. How does the design of the gate dielectric layer contribute to the overall performance of the integrated circuit device? 2. What are the potential implications of using nano-sheet stacks in semiconductor technology for future innovations in electronics?
Original Abstract Submitted
an integrated circuit device includes, a first nano-sheet stack including a plurality of nano-sheets arranged on a fin-type active region extending in a first horizontal direction, a gate line extending in a second horizontal direction on the fin-type active region, a vertical structure contacting the plurality of nano-sheets, and a first gate dielectric layer disposed between the gate line and the plurality of nano-sheets and between the gate line and the vertical structure, wherein the gate line includes a first sub-gate portion disposed under each of the plurality of nano-sheets, the first gate dielectric layer includes a first portion disposed between the gate line and the plurality of nano-sheets, and a second portion disposed between the first sub-gate portion and the vertical structure, and a thickness of the second portion in the second horizontal direction is greater than a thickness of the first portion in the vertical direction.
