Samsung electronics co., ltd. (20240321960). MULTI-STACK SEMICONDUCTOR DEVICE simplified abstract
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MULTI-STACK SEMICONDUCTOR DEVICE
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MULTI-STACK SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321960 titled 'MULTI-STACK SEMICONDUCTOR DEVICE
The abstract describes a multi-stack semiconductor device with various components arranged in a specific configuration.
- The device includes a substrate, device isolation layer, first channels, first gate lines, first source/drain areas, second channel, second gate line, second source/drain areas, third channel, third gate line, third source/drain areas, and a first lower source/drain contact.
- The first gate lines cover the first channels and extend in a second horizontal direction, spaced apart from each other in the first horizontal direction.
- The first source/drain areas are arranged on both sides of each of the first channels in the first horizontal direction.
- The second channel is arranged apart from the first gate line in the vertical direction over any one of the first gate lines.
- The second gate line, second source/drain areas, third channel, and third gate line are arranged similarly in the vertical direction.
- The first lower source/drain contact extends in the vertical direction and connects to each of the first, second, and third source/drain areas.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications. - It can enhance the performance and efficiency of integrated circuits in electronic devices.
Problems Solved: - The technology addresses the need for improved semiconductor device structures with enhanced functionality and performance. - It solves the challenges associated with optimizing the layout and design of multi-stack semiconductor devices.
Benefits: - Improved functionality and performance of semiconductor devices. - Enhanced efficiency and reliability of integrated circuits. - Potential cost savings in the manufacturing process.
Commercial Applications: - The technology can be applied in the production of smartphones, tablets, computers, and other electronic devices. - It has potential uses in the automotive industry for advanced driver assistance systems and vehicle electronics.
Questions about Multi-Stack Semiconductor Device: 1. How does the arrangement of the gate lines and source/drain areas contribute to the performance of the semiconductor device? 2. What are the potential implications of this technology for the future of semiconductor manufacturing?
Frequently Updated Research: - Stay updated on the latest advancements in multi-stack semiconductor device technology to understand its evolving applications and potential improvements.
Original Abstract Submitted
a multi-stack semiconductor device includes a substrate, a device isolation layer, first channels, first gate lines covering the first channel, extending in a second horizontal direction, and spaced apart from each other in the first horizontal direction, first source/drain areas arranged on both sides of each of the first channels in the first horizontal direction, a second channel arranged apart from the first gate line in the vertical direction over any one of the first gate lines, a second gate line, second source/drain areas, a third channel arranged apart from the second gate line in the vertical direction over the second gate line, a third gate line, third source/drain areas, and a first lower source/drain contact extending in the vertical direction and connected to each of the first source/drain area, the second source/drain area, and the third source/drain area.
